RHEED Oscillation-Based Optimization of Growth Conditions for Gas-Source MBE Growth of InGaP Using Tertiarybutylphosphine

1997 ◽  
Author(s):  
Hironobu Sai ◽  
Hajime Fujikura ◽  
Hideki Hasegawa
Keyword(s):  
Growth Conditions ◽  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Growth of Cubic GaN by MBE and Its Properties

1996 ◽  
Vol 449 ◽  
Author(s):  
S. Yoshida ◽  
H. Okumura ◽  
G. Feuillet ◽  
P. Hacke ◽  
K. Balakrishnan
Keyword(s):  
Growth Conditions ◽  
Mbe Growth ◽  
Gas Source ◽  
N Source ◽  
Growth Method ◽  
Cubic Gan ◽  
Substrate Surfaces ◽  
Gas Source Mbe ◽  
Equilibrium Growth

ABSTRACTMolecular beam epitaxy (MBE) technique is a useful method to grow III-V nitrides, especially those having a metastable crystal structure, like cubic GaN (c-GaN), because of the capability of in situ observation of growing surfaces and its non-equilibrium growth mechanism. We have grown c-GaN on GaAs and 3C-SiC substrates by gas source MBE using dimethylhydrazine or activated nitrogen beam as an N source, and measured their luminescent and optical properties. This paper summarizes the MBE growth and properties of c-GaN, comparing with those of hexagonal one, and the control of the crystal structures is discussed in terms of growth method, orientation of substrate surfaces and growth conditions.

Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell

1997 ◽  
Vol 175-176 ◽  
pp. 150-155 ◽  
Author(s):  
K. Iwata ◽  
H. Asahi ◽  
K. Asami ◽  
S. Gonda
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe ◽  
Rich Side

Gas source MBE growth of InP under in-rich conditions

2005 ◽  
Author(s):  
Tsuen-Lin Lee ◽  
Jin-Shang Liu ◽  
Hao-Hsiung Lin
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

1999 ◽  
Vol 25 (1-2) ◽  
pp. 477-479 ◽  
Author(s):  
J.L. Liu ◽  
S.J. Cai ◽  
G.L. Jin ◽  
Y.S. Tang ◽  
K.L. Wang
Keyword(s):  
Si Substrate ◽  
Mbe Growth ◽  
Gas Source ◽  
Nano Wires ◽  
Gas Source Mbe

New semiconductors TlInGaP and their gas source MBE growth

1997 ◽  
Vol 175-176 ◽  
pp. 1195-1199 ◽  
Author(s):  
H. Asahi ◽  
M. Fushida ◽  
K. Yamamoto ◽  
K. Iwata ◽  
H. Koh ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Gas-source MBE growth of strain-relaxed Si1−xCx on Si(100) substrates

2013 ◽  
Vol 378 ◽  
pp. 212-217 ◽  
Author(s):  
Keisuke Arimoto ◽  
Shoichiro Sakai ◽  
Hiroshi Furukawa ◽  
Junji Yamanaka ◽  
Kiyokazu Nakagawa ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe
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