Growth of Cubic GaN by MBE and Its Properties

1996 ◽  
Vol 449 ◽  
Author(s):  
S. Yoshida ◽  
H. Okumura ◽  
G. Feuillet ◽  
P. Hacke ◽  
K. Balakrishnan
Keyword(s):  
Growth Conditions ◽  
Mbe Growth ◽  
Gas Source ◽  
N Source ◽  
Growth Method ◽  
Cubic Gan ◽  
Substrate Surfaces ◽  
Gas Source Mbe ◽  
Equilibrium Growth

ABSTRACTMolecular beam epitaxy (MBE) technique is a useful method to grow III-V nitrides, especially those having a metastable crystal structure, like cubic GaN (c-GaN), because of the capability of in situ observation of growing surfaces and its non-equilibrium growth mechanism. We have grown c-GaN on GaAs and 3C-SiC substrates by gas source MBE using dimethylhydrazine or activated nitrogen beam as an N source, and measured their luminescent and optical properties. This paper summarizes the MBE growth and properties of c-GaN, comparing with those of hexagonal one, and the control of the crystal structures is discussed in terms of growth method, orientation of substrate surfaces and growth conditions.

V - III ratio effect on Cubic GaN Grown by RF Plasma Assisted Gas Source MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Li-Wei Sung ◽  
Hao-Hsiung Lin ◽  
Chih-Ta Chia
Keyword(s):  
Optimal Growth ◽  
Growth Conditions ◽  
Optical Quality ◽  
Rf Plasma ◽  
Stable Regime ◽  
Gas Source ◽  
Cubic Gan ◽  
Gas Source Mbe ◽  
N Flux

AbstractWe report the investigation on the growth conditions and optical properties of cubic GaN films grown on (001) GaAs substrate by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga to N flux ratios that were determined by deposition rates directly. Three growth regimes, namely, Ga droplet, intermediate Ga stable, and N stable regime, are defined in the growth diagram. Optical quality of these films was determined by using photoluminescence (PL). Micro-Raman scattering were performed to analyze the crystallinity of the films. Optimal growth condition of cubic GaN is on the boundary of intermediate Ga stable regime and Ga droplet regime at a growth temperature of Ts = 720°C.

Structural and Optical Characterization of High-Quality Cubic GaN Epilayers Grown on GaAs and 3C-SiC Substrates by Gas-Source MBE Using RHEED In Situ Monitoring

1996 ◽  
Vol 449 ◽  
Author(s):  
H. Okumura ◽  
K. Balakrishnan ◽  
G. Feuillet ◽  
K. Ohta ◽  
H. Hamaguchi ◽  
...  
Keyword(s):  
Growth Parameters ◽  
In Situ Monitoring ◽  
Molecular Beam Epitaxy Growth ◽  
X Ray Diffraction ◽  
Gas Source ◽  
Surface Reconstructions ◽  
Cubic Gan ◽  
Gas Source Mbe

ABSTRACTBy monitoring RHEED reconstruction patterns during gas source molecular beam epitaxy growth, the optimization of the growth for cubic GaN was carried out successfully. Cubic GaN epilayer having a X-ray diffraction width of 16min and a low temperature photoluminescence emission width of 19meV was obtained on a 3C-SiC substrate by adjusting the effective III/V ratio in-situ during the growth, which can be inferred from the surface reconstruction transitions. It was found that the surface reconstructions of cubic GaN surfaces are good indices for the optimization of growth parameters.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell

1997 ◽  
Vol 175-176 ◽  
pp. 150-155 ◽  
Author(s):  
K. Iwata ◽  
H. Asahi ◽  
K. Asami ◽  
S. Gonda
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe ◽  
Rich Side

In Situ Monitoring of the Smear-Out of the Ge Profile in GAS Source SiGe MBE Using Rheed Intensity Oscillations

1992 ◽  
Vol 263 ◽  
Author(s):  
K. Werner ◽  
S. Butzke ◽  
J.W. Maes ◽  
O.F.Z. Schannen ◽  
J. Trommel ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Catalytic Effect ◽  
Growth Conditions ◽  
In Situ Monitoring ◽  
Marked Contrast ◽  
Si Substrates ◽  
Gas Source

ABSTRACTWe have studied the deposition of GexSi1−x layers on (100) Si substrates by gas source molecular beam epitaxy (GSMBE) using disilane and germane.The investigation of RHEED intensity oscillations during growth reveals the well known rate enhancement obtained when adding a small amount of germane to the disilane flux. However, when exposing a previously deposited Ge layer to a pure disilane flux the growth rate during the first few monolayers remains at an enhanced value but returns to its homoepitaxial value after about 10 to 15 monolayers. This behaviour was observed under a variety of growth conditions. It is in marked contrast to the experience obtained in conventional Si/Ge MBE and suggests a catalytic effect of the particular surface present during GSMBE growth. We propose that this effect is caused by the surface segregation of Ge species and leads to a smear-out of the Ge profile in the layer.

Gas source MBE growth of TlInGaAs/InP DH structures for the application to WDM optical fiber communication systems

2001 ◽  
Vol 227-228 ◽  
pp. 307-312 ◽  
Author(s):  
H. Asahi ◽  
K. Konishi ◽  
O. Maeda ◽  
A. Ayabe ◽  
H.J. Lee ◽  
...  
Keyword(s):  
Optical Fiber ◽  
Communication Systems ◽  
Optical Fiber Communication ◽  
Fiber Communication ◽  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Gas source MBE growth of InP under in-rich conditions

2005 ◽  
Author(s):  
Tsuen-Lin Lee ◽  
Jin-Shang Liu ◽  
Hao-Hsiung Lin
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

The Oxide/Nitride Interface: a study for gate dielectrics and field passivation

2003 ◽  
Vol 786 ◽  
Author(s):  
B.P. Gila ◽  
B. Luo ◽  
J. Kim ◽  
R. Mehandru ◽  
J.R. LaRoche ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Substrate Surface ◽  
Surface Preparation ◽  
Dielectric Materials ◽  
Ex Situ ◽  
Dielectric Films ◽  
Interface Quality ◽  
Gas Source ◽  
Gas Source Mbe

ABSTRACTThe study of the effects of substrate surface preparation of GaN, both in-situ and ex-situ and the subsequent deposition of dielectric materials is necessary to create a viable GaN FET technology. Surface preparation techniques have been explored using RHEED, AES, SIMS and C-V measurements to produce films of low interface trap density, 1–2E11 eV−1cm−2. A similar study of the as-fabricated HEMT surface was carried out to create a cleaning procedure prior to dielectric passivation. Dielectric films of Sc2O3 and MgO were deposited via gas-source MBE. Post-deposition materials characterization included AES, TEM, XRR and XPS, as well as gate pulse and isolation current measurements for the passivated HEMT devices. From this study, the relationship between the interface structure and chemistry and the quality of the oxide/nitride electrical interface has been determined. The resulting process has led to the near elimination of the current collapse phenomenon. In addition, the resulting oxide/nitride interface quality has allowed for the first demonstration of inversion in GaN.

Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

1999 ◽  
Vol 25 (1-2) ◽  
pp. 477-479 ◽  
Author(s):  
J.L. Liu ◽  
S.J. Cai ◽  
G.L. Jin ◽  
Y.S. Tang ◽  
K.L. Wang
Keyword(s):  
Si Substrate ◽  
Mbe Growth ◽  
Gas Source ◽  
Nano Wires ◽  
Gas Source Mbe
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