Double-Quantum-Well Si1-xGex/Si Electron Resonant Tunneling Diode with a High Peak-to-Valley Ratio at RT

1998 ◽  
Author(s):  
Hajime Koyama ◽  
Yoshiyuki Suda
1993 ◽  
Vol 07 (07) ◽  
pp. 465-470 ◽  
Author(s):  
HANYU SHENG ◽  
SOO-JIN CHUA ◽  
JUHA SINKKONEN

A simple capacitance formula based on a semiclassical electron transport theory is given. The results show that the charges stored in the quantum well of a resonant tunneling diode have a considerable effect on the capacitance in the resonant region. The calculated capacitance is consistent with the experimental results.


1993 ◽  
Vol 48 (15) ◽  
pp. 10966-10971 ◽  
Author(s):  
Mark I. Stockman ◽  
Lakshmi N. Pandey ◽  
Leonid S. Muratov ◽  
Thomas F. George

2012 ◽  
Vol 100 (21) ◽  
pp. 213907 ◽  
Author(s):  
Matthew P. Lumb ◽  
Michael K. Yakes ◽  
María González ◽  
Igor Vurgaftman ◽  
Christopher G. Bailey ◽  
...  

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1958-1960 ◽  
Author(s):  
Christoph Wirner ◽  
Yuji Awano ◽  
Toshiro Futatsugi ◽  
Naoki Yokoyama ◽  
Tadashi Nakagawa ◽  
...  

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