CAPACITANCE PROPERTY OF A RESONANT TUNNELING DIODE

1993 ◽  
Vol 07 (07) ◽  
pp. 465-470 ◽  
Author(s):  
HANYU SHENG ◽  
SOO-JIN CHUA ◽  
JUHA SINKKONEN

A simple capacitance formula based on a semiclassical electron transport theory is given. The results show that the charges stored in the quantum well of a resonant tunneling diode have a considerable effect on the capacitance in the resonant region. The calculated capacitance is consistent with the experimental results.

2005 ◽  
Vol 71 (23) ◽  
Author(s):  
P. Havu ◽  
N. Tuomisto ◽  
R. Väänänen ◽  
M. J. Puska ◽  
R. M. Nieminen

1986 ◽  
Vol 25 (Part 2, No. 9) ◽  
pp. L786-L788 ◽  
Author(s):  
Hideo Toyoshima ◽  
Yuji Ando ◽  
Akihiko Okamoto ◽  
Tomohiro Itoh

2006 ◽  
Vol 73 (15) ◽  
Author(s):  
P. Havu ◽  
N. Tuomisto ◽  
R. Väänänen ◽  
M. J. Puska ◽  
R. M. Nieminen

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