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Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation
Mapping Intimacies
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10.7567/ssdm.2012.f-7-4
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2012
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Author(s):
T. Oishi
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K. Hayashi
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Y. Yamaguchi
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H. Otsuka
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K. Yamanaka
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...
Keyword(s):
Leakage Current
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Reverse Bias
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Gate Leakage Current
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Gate Leakage
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Mechanism Study
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Gan Hemt
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Hemt Structure
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Tcad Simulation
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High Reverse Bias
Download Full-text
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References
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices
Microelectronics Reliability
◽
10.1016/j.microrel.2017.07.049
◽
2017
◽
Vol 76-77
◽
pp. 350-356
◽
Cited By ~ 7
Author(s):
K. Mukherjee
◽
F. Darracq
◽
A. Curutchet
◽
N. Malbert
◽
N. Labat
Keyword(s):
Leakage Current
◽
Gate Leakage Current
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Current Analysis
◽
Gate Leakage
◽
Gan Hemt
◽
Tcad Simulation
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Dynamic gate leakage current of p-GaN Gate AlGaN/GaN HEMT under positive bias Conditions
10.1109/wipdaasia51810.2021.9656087
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2021
◽
Author(s):
Yu Sun
◽
Maojun Wang
◽
Wen Lei
◽
Chun Han
Keyword(s):
Leakage Current
◽
Positive Bias
◽
Gate Leakage Current
◽
Gate Leakage
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Reduced gate leakage current in AlGaN/GaN HEMT by oxygen passivation of AlGaN surface
Electronics Letters
◽
10.1049/el:20081350
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2008
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Vol 44
(18)
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pp. 1091
◽
Cited By ~ 15
Author(s):
S.K. Hong
◽
K.H. Shim
◽
J.W. Yang
Keyword(s):
Leakage Current
◽
Gate Leakage Current
◽
Gate Leakage
◽
Gan Hemt
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Influence of Surface Defect Charge at AlGaN–GaN-HEMT Upon Schottky Gate Leakage Current and Breakdown Voltage
IEEE Transactions on Electron Devices
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10.1109/ted.2004.842710
◽
2005
◽
Vol 52
(2)
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pp. 159-164
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Cited By ~ 92
Author(s):
W. Saito
◽
M. Kuraguchi
◽
Y. Takada
◽
K. Tsuda
◽
I. Omura
◽
...
Keyword(s):
Leakage Current
◽
Breakdown Voltage
◽
Surface Defect
◽
Gate Leakage Current
◽
Gate Leakage
◽
Gan Hemt
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Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current
Microelectronics Reliability
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10.1016/j.microrel.2016.05.014
◽
2016
◽
Vol 63
◽
pp. 52-55
◽
Cited By ~ 1
Author(s):
J. Chen
◽
H. Wakabayashi
◽
K. Tsutsui
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H. Iwai
◽
K. Kakushima
Keyword(s):
Leakage Current
◽
High Reliability
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Gate Leakage Current
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Gate Leakage
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Gate Electrodes
◽
Gan Hemt
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Inverse temperature dependence of reverse gate leakage current in AlGaN/GaN HEMT
Semiconductor Science and Technology
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10.1088/0268-1242/28/1/015026
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2012
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Vol 28
(1)
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pp. 015026
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Cited By ~ 15
Author(s):
J K Kaushik
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V R Balakrishnan
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Keyword(s):
Temperature Dependence
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Leakage Current
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Inverse Temperature
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Gate Leakage Current
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Gate Leakage
◽
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Gate Leakage Current Assessment of AlGaN/GaN HEMT with AlN Cap Layer
Computers and Devices for Communication - Lecture Notes in Networks and Systems
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10.1007/978-981-15-8366-7_68
◽
2021
◽
pp. 459-464
Author(s):
Shreyasi Das
◽
Vandana Kumari
◽
Mridula Gupta
◽
Manoj Saxena
Keyword(s):
Leakage Current
◽
Gate Leakage Current
◽
Gate Leakage
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Gan Hemt
◽
Cap Layer
◽
Current Assessment
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Copper gate AlGaN/GaN HEMT with low gate leakage current
IEEE Electron Device Letters
◽
10.1109/led.2003.815158
◽
2003
◽
Vol 24
(8)
◽
pp. 500-502
◽
Cited By ~ 48
Author(s):
Jin-Ping Ao
◽
D. Kikuta
◽
N. Kubota
◽
Y. Naoi
◽
Y. Ohno
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Leakage Current
◽
Gate Leakage Current
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Gate Leakage
◽
Gan Hemt
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Gate Leakage Current Suppression in AlGaN/GaN HEMT by RTP Annealing
Physics of Semiconductor Devices - Environmental Science and Engineering
◽
10.1007/978-3-319-03002-9_37
◽
2014
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pp. 145-147
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Cited By ~ 1
Author(s):
Somna S. Mahajan
◽
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◽
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◽
Sonalee Kapoor
◽
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◽
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Keyword(s):
Leakage Current
◽
Gate Leakage Current
◽
Gate Leakage
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Gan Hemt
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Negative charging effect of traps on the gate leakage current of an AlGaN/GaN HEMT
Journal of the Korean Physical Society
◽
10.3938/jkps.65.421
◽
2014
◽
Vol 65
(3)
◽
pp. 421-424
◽
Cited By ~ 2
Author(s):
J. J. Kim
◽
J. H. Lim
◽
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◽
W. Stanchina
Keyword(s):
Leakage Current
◽
Gate Leakage Current
◽
Gate Leakage
◽
Gan Hemt
◽
Charging Effect
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