laser transition
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CrystEngComm ◽  
2022 ◽  
Author(s):  
Yan Zhang ◽  
Zhen Gong ◽  
Xiaoming Duan ◽  
Junping Yuan ◽  
Jiayue Xu ◽  
...  

Single crystals of Ho3+-doped bismuth silicate (BSO) were grown by the modified Bridgman method. The spectroscopic properties for 2 μm laser transition via the 5I7  5I8 transition were investigated...


Author(s):  
Zackery D. Fleischman ◽  
Ei E. Brown ◽  
Mark Dubinskii ◽  
Jenny Rosen

2020 ◽  
Vol 228 ◽  
pp. 117584
Author(s):  
K.A. Pierpoint ◽  
M.E. Doroshenko ◽  
O.K. Alimov ◽  
A.G. Papashvili ◽  
V.A. Konyushkin ◽  
...  

2017 ◽  
Vol 66 ◽  
pp. 189-196 ◽  
Author(s):  
G. Chinna Ram ◽  
T. Narendrudu ◽  
S. Suresh ◽  
A. Suneel Kumar ◽  
M.V. Sambasiva Rao ◽  
...  
Keyword(s):  

2016 ◽  
Vol 55 ◽  
pp. 136-144 ◽  
Author(s):  
F. Zaman ◽  
J. Kaewkhao ◽  
N. Srisittipokakun ◽  
N. Wantana ◽  
H.J. Kim ◽  
...  
Keyword(s):  

2016 ◽  
Vol 172 ◽  
pp. 219-223 ◽  
Author(s):  
O.K. Alimov ◽  
M.E. Doroshenko ◽  
V.A. Konyushkin ◽  
A.N. Nakladov ◽  
A.G. Papashvili ◽  
...  

2016 ◽  
Vol 78 (3) ◽  
Author(s):  
Ganesan Krishnan ◽  
Noriah Bidin

The temperature dependence of Nd:YVO4 laser crystal pumped by laser diode emitting at 808 nm is studied within the range of 5 oC to 60 oC. The spectroscopy properties of quasi three level at 914 nm (4F3/2 - 4I 9/2) and four level at 1064 nm (4F3/2 - 4I 11/2) are characterized. The lineshape function of the transition lines were broadened as the temperature increases. The phenomenon is attributed to change in linewidth, lineshift and intensity. The linewidths for both laser transition of 914 nm and 1064 nm increases with temperature with the rate of 0.105 cm-1/oC and 0.074 cm-1/oC respectively. The peak of 914nm and 1064 nm lineshapes shifted to a longer wavelength with the rate of 3.0 pm/oC and 4.2 pm/oC respectively which correspond to same amount of lineshift. The lineshape broadening with respect to the temperature is due to one-phonon emission and Raman phonon scattering processes.  The intensities of 914 nm and 1064 nm transition lines are found to be decreased at the rate of 0.15 %/oC and 0.45 %/oC respectively due to non-radiative effects. Quasi three level laser transition is more temperature dependent because it terminal level is close to the ground state which suffers from higher phonon-ion interaction rather than four level laser system.


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