parasitic element
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2021 ◽  
Author(s):  
Mamdouh El-Sayed ◽  
Alaa Yossry ◽  
Ashraf Yahia ◽  
Mostafa El-Easser ◽  
Nasr Gad

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Chi Zhang ◽  
Yong-Chang Jiao ◽  
Jingxuan Wen ◽  
Yangdong Yan ◽  
Zibin Weng

Author(s):  
Mathieu Gerber ◽  
Guillaume Callerant ◽  
Christophe Espanet ◽  
Farid Meibody-Tabar ◽  
Noureddine Takorabet

Purpose The purpose of this paper is to study the high-frequency impacts of fast switching wide-bandgap transistors on electronic and motor designs. The high-frequency power converters, dedicated to driving high-speed motors, require specific models to design predictively electronic and motors. Design/methodology/approach From magnetic and electric models, the high-frequency parasitic elements for both electronics and motor are determined. Then, high-frequency circuit models accounting for of parasitic element extractions are built to study the wide bandgap transistors commutations and their impacts on motor windings. Findings The results of the models, for electronics and motors, are promising. The high-frequency commutation cell study is used to optimize the layouts and to improve the commutation behaviours and performances. The impact of the switching speed is highlighted on the winding voltage susceptibility. Then, the switching frequency and commutation rapidity can be both optimized to increase the performance of motor and electronics. The electronic model is validated by experimentations. Research limitations/implications The method can be only applied to the existing motor and electronic designs. It is not taken into account in an automized global high-frequency optimizer. Originality/value Helped by magnetic and electric FEA calculations where the parasitic element extractions are performed. The switching frequency and commutation rapidity can be both optimized to increase the performance of motor and electronics.


2020 ◽  
Vol 14 (3) ◽  
pp. 53-61
Author(s):  
Sanaa Salama ◽  
Ashraf Abuelhaija ◽  
Tareq Baldawi ◽  
Samer Issa

2020 ◽  
Vol 20 (3) ◽  
pp. 164-168
Author(s):  
Yoon-Seon Choi ◽  
Ji-Hun Hong ◽  
Jong-Myung Woo

This study designed an electrically and frequency-tunable printed inverted-F antenna (PIFA) with a perturbed parasitic element between the antenna and the ground plane. The resonant frequency of the proposed antenna can be changed via the short- and open-circuit operation of the parasitic element. This operation is activated using an electrical switch, which in this case is a PIN diode with an inductor and a resistor. The antenna was designed on the basis of the principles of the perturbation method, which enables control over resonant frequencies through modifications to the volume of a metal cavity. Meandered gaps were incorporated into the parasitic element for the independent operation of each PIN diode switch. The size of the PIFA’s radiator is 4.8 × 10 mm<sup>2</sup>, and the tunable resonant frequency at the –10 dB bandwidth is 340 MHz (17.3%).


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