Solidification microstructure in a supercooled binary alloy

The maximum undercooling that has been achieved for Ni-Cu alloy, by using molten glass purification and cyclic super-heating technology, is 270 K. With the help of high-speed photography, the solidification front images of Ni-Cu alloy at various typical undercooling were obtained. Two grain refinements occurred in the range of 60 K< ΔT < 100 K and ΔT > 170 K, the solidification front became smoother, and the solidification position appeared randomly. With the increase of undercooling, the transition from solute diffusion to thermal diffusion leads to the transition from coarse dendrite to directional fine dendrite. At large undercooling, considerable stress is accumulated and some dislocations exist in the microstructure. However, the proportion of high-angle grain boundaries is as high as 89%, with twin boundaries of 13.6% and most strain-free structures, and the microhardness decreases sharply. This indicates that the accumulated stress at large undercooling causes the plastic strains in the microstructure, and in the later stage of recalescence, part of the plastic strains is dissipated by the system and acts as the driving force to promote the recrystallization of the microstructure.

Phase separation in undercooled molten Pd80Si20: Part I

Three different kinds of morphology are found in undercooled Pd80Si20, and they dominate at different undercooling regimens ΔT, defined as ΔT = T1 – Tk, where T1 is the liquidus of Pd80Si20 and Tk is the kinetic crystallization temperature. In the small undercooling regimen, i.e., for ΔT ≤ 190 K, the microstructures are typically dendritic precipitation with a eutecticlike background. In the intermediate undercooling regimen, i.e., for 190 ≤ ΔT ≤ 220 K, spherical morphologies, which arise from nucleation and growth, are identified. In addition, Pd particles are found throughout an entire undercooled specimen. In the large undercooling regimen, i.e., for ΔT ≥ 220 K, a connected structure composed of two subnetworks is found. A sharp decrease in the dimension of the microstructures occurs from the intermediate to the large undercooling regimen. Although the crystalline phases in the intermediate and the large undercooling regimens are the same, the crystal growth rate is too slow to bring about the occurrence of grain refinement. Combining the morphologies observed in the three undercooling regimens and their crystallization behaviors, we conclude that phase separation takes place in undercooled molten Pd80Si20.

Freezing in Silicon at Large Undercooling

ABSTRACTPulsed laser irradiation is used to induce epitaxial explosive crystallization of amorphous silicon layers buried in a (100) oriented crystalline matrix. This process is mediated by a self-propagating liquid layer. Time-resolved determination of the crystallization speed combined with numerical calculation of the interface temperature shows that freezing in silicon saturates at 16 m/s for large undercooling (> 130 K). A comparison between data and different models for melting and freezing indicates that the crystallization behavior at large undercooling can be described correctly if the rate-limiting factor is assumed to be diffusion in liquid Si at the solid/liquid interface.