Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride from Titanium Bromide And Ammonia

ABSTRACTTitanium nitride films were formed by chemical vapor deposition from titanium tetrabromide and ammonia at atmospheric pressure and substrate temperatures from about 400 to 600 °C. Although titanium tetrabromide is a highly hygroscopic solid at room temperature, it can be handled conveniently as a very concentrated liquid solution (85 weight percent) in bromine as a solvent. This solution can be vaporized by a direct liquid injection system. Alternatively, the solution can be pumped into a bubbler, from which the bromine solvent is then removed by fractional distillation. Rutherford Backscattering Spectroscopy was used to determine that the bromine content of TiN deposited at 500°C was about one atomic per cent. Growth rates were about 17 nm/min, and electrical resistivity was found to be about 200 μΩ-cm.

Some Metal Halide – Phosphorus Halide – Alkyl Halide Complexes. Part III. The µ-Trihalohexahalodimetallate Ions of Titanium and Zirconium

Titanium tetrachloride reacts rapidly with trichloro-, tribromo- and methyldichlorophosphine in the presence of t-butyl chloride to give compounds containing a phosphonium cation R1R2PX2+ (R1 = t-butyl, R2 = chloride, bromide, or methyl, X = chloride or bromide) and the principal metal-containing anion, Ti2Cl9−. For tribromophosphine and t-butyl chloride a stoichiometric product, [ButPBr3][Ti2Cl9] was obtained which was characterized using vibrational spectroscopy. The other reactions gave non-stoichiometric materials, the sublimates of which may contain higher polymeric anions whilst the residues contained TiCl5− along with the parent dimeric anion.Zirconium tetrachloride and titanium tetrabromide reacted in a similar way to give the new ions Zr2Cl9− and Ti2Br9− in stoichiometric reactions.