lead chalcogenides
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2022 ◽  
Vol 130 (2) ◽  
pp. 325
Author(s):  
И.Д. Скурлов ◽  
П.С. Парфёнов ◽  
А.В. Соколова ◽  
Д.А. Татаринов ◽  
А.А. Бабаев ◽  
...  

Semiconductor 2D nanostructures are a new platform for the creation of modern optoelectronic devices. Layered 2D PbSe-MoS2 nanostructures with efficient photoinduced charge transfer from PbSe nanoplatelets (NPLs) to MoS2 were created. When PbSe NPLs with short organic ligands are deposited onto a thin layer of MoS2 NPLs, a decrease in their photoluminescence intensity and a decrease in the average photoluminescence lifetime are observed. When a layered 2D PbSe-MoS2 nanostructure is illuminated with IR radiation, a photocurrent appears, which indicates the contribution of PbSe NPLs to the electrical response of the system. Ultrathin layers of transition metal dichalcogenides sensitized with nanostructures based on lead chalcogenides can be used in photodetectors with a spectral sensitivity region extended to the near-IR range.


2021 ◽  
Vol 119 (23) ◽  
pp. 230501
Author(s):  
Hany A. Afify ◽  
Mykhailo Sytnyk ◽  
Shuyu Zhou ◽  
Andres Osvet ◽  
Christoph J. Brabec ◽  
...  

2021 ◽  
pp. 427-482
Author(s):  
Ludmila Ryabova ◽  
Boris Akimov
Keyword(s):  

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Iryna Zelenina ◽  
Paul Simon ◽  
Igor Veremchuk ◽  
Xinke Wang ◽  
Matej Bobnar ◽  
...  

AbstractLead chalcogenides are known for their thermoelectric properties since the first work of Thomas Seebeck on the discovery of this phenomenon. Yet, the electronic properties of lead telluride are still of interest due to the incomplete understanding of the metal-to-semiconductor transition at temperatures around  230 °C. Here, a temperature-dependent atomic-resolution transmission electron microscopy study performed on a single crystal of lead telluride reveals structural reasons for this electronic transition. Below the transition temperature, the formation of a dislocation network due to shifts of the NaCl-like atomic slabs perpendicular to {100} was observed. The local structure modification leads to the appearance of in-gap electronic states and causes metal-like electronic transport behavior. The dislocation network disappears with increasing temperature, yielding semiconductor-like electrical conductivity, and re-appears after cooling to room temperature restoring the metal-like behavior. The structural defects coupled to the ordering of stereochemically active lone pairs of lead atoms are discussed in the context of dislocations' formation.


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