differential interference microscope
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2014 ◽  
Vol 778-780 ◽  
pp. 545-548 ◽  
Author(s):  
Keiichi Yamada ◽  
Osamu Ishiyama ◽  
Kentaro Tamura ◽  
Tamotsu Yamashita ◽  
Atsushi Shimozato ◽  
...  

This work reports about effect of SiC epitaxial-wafer surface planarization by chemo-mechanical polishing (CMP) treatment on electrical properties of SiC-MOS capacitor. We have observed the surface morphology of 4H-SiC epitaxial layer planarized by CMP treatment using a confocal differential interference microscope, and evaluated the reliability of gate oxides on this surface using constant current time-dependent dielectric breakdown (CC-TDDB) and current-voltage (I-V) characteristics. Surface roughness such as step bunching deteriorates drastically the reliability of gate oxide, while the epitaxial-surface planarization by CMP treatment improved oxide reliability due to the high uniformity of the oxide film thickness.


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