time dependent dielectric breakdown Recently Published Documents

Low K

In this work, simulation modeling of processes of the diffusion of copper ions in low-k dielectric between two neighboring copper lines is performed

Understanding the Initial Stages of Time Dependent Dielectric Breakdown in Si/SiO2 MOSFETs Utilizing EDMR and NZFMR

10.1109/iirw53245.2021.9635607 ◽

2021 ◽

Author(s):

Fedor V. Sharov ◽

Stephen. J. Moxim ◽

Patrick M. Lenahan ◽

David R. Hughart ◽

Gaddi S. Haase ◽

...

Keyword(s):

Dielectric Breakdown ◽

Time Dependent ◽

Constant Electric Field Study of Time Dependent Dielectric Breakdown in a Low-k Interlevel Dielectric

10.1109/iirw53245.2021.9635618 ◽

2021 ◽

Author(s):

R. Pareis ◽

J.R Lloyd

Keyword(s):

Electric Field ◽

Field Study ◽

Dielectric Breakdown ◽

Constant Electric Field ◽

Time Dependent ◽

Low K

Electrical overstress effect characterization on Power MOS Trenchfet and correlation with time dependent dielectric breakdown

Microelectronics Reliability ◽

10.1016/j.microrel.2021.114351 ◽

2021 ◽

Vol 125 ◽

pp. 114351

Author(s):

B. Mazza ◽

S. Patanè ◽

F. Cordiano ◽

M. Giliberto ◽

G. Barletta ◽

...

Keyword(s):

Dielectric Breakdown ◽

Time Dependent ◽

Electrical Overstress

Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors

10.1109/eurosoi-ulis53016.2021.9560700 ◽

2021 ◽

Author(s):

Federico Giuliano ◽

Susanna Reggiani ◽

Elena Gnani ◽

Antonio Gnudi ◽

Mattia Rossetti ◽

...

Keyword(s):

Dielectric Breakdown ◽

Time Dependent ◽

Constant Current ◽

Amorphous Sio2 ◽

Current Time ◽

Time-dependent dielectric breakdown of gate oxide on 4H-SiC with different oxidation processes

Microelectronics Reliability ◽

10.1016/j.microrel.2021.114186 ◽

2021 ◽

Vol 123 ◽

pp. 114186

Author(s):

Bing-Yue Tsui ◽

Yi-Ting Huang ◽

Tian-Li Wu ◽

Chao-Hsin Chien

Keyword(s):

Dielectric Breakdown ◽

Gate Oxide ◽

Time Dependent ◽

Oxidation Processes ◽

Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3064793 ◽

2021 ◽

Vol 68 (5) ◽

pp. 2220-2225

Author(s):

Stefano Dalcanale ◽

Michael J. Uren ◽

Josephine Chang ◽

Ken Nagamatsu ◽

Justin A. Parke ◽

...

Keyword(s):

Leakage Current ◽

Dielectric Breakdown ◽

Noise Analysis ◽

Time Dependent ◽

Substrate Bias Enhanced Trap Effects on Time-Dependent Dielectric Breakdown of GaN MIS-HEMTs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3067615 ◽

2021 ◽

Vol 68 (5) ◽

pp. 2233-2239

Author(s):

Wen Yang ◽

Jiann-Shiun Yuan

Keyword(s):

Dielectric Breakdown ◽

Time Dependent ◽

Substrate Bias ◽

Calculations of IC reliability for backend time-dependent-dielectric-breakdown mechanism

Design-Process-Technology Co-optimization XV ◽

10.1117/12.2583827 ◽

2021 ◽

Author(s):

Chi-Min Yuan ◽

Ning Liu ◽

Sumy Jose

Keyword(s):

Dielectric Breakdown ◽

Time Dependent ◽

Breakdown Mechanism

Time-Dependent Dielectric Breakdown of Commercial 1.2 kV 4H-SiC Power MOSFETs

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2021.3091898 ◽

2021 ◽

pp. 1-1

Author(s):

Tianshi Liu ◽

Shengnan Zhu ◽

Marvin H. White ◽

Arash Salemi ◽

David Sheridan ◽

...

Keyword(s):

Dielectric Breakdown ◽

Time Dependent ◽

Power Mosfets ◽