Прохождение низкоэнергетических электронов и плотность незаполненных состояний сверхтонких слоев TCNQ на поверхности окисленного кремния

The results of the study of the formation of unoccupied electronic states and of the interface potential barrier during thermal deposition of tetracyanoquinodimethane (TCNQ) films, up to 7 nm thick, on the (SiO2)n-Si surface are presented. The electronic properties of the surface under study were determined using the total current spectroscopy (TCS) technique and as testing electron beam with energies in the range from 5 eV to 20 eV above the Fermi level. The formation of a potential barrier in the (SiO2)n-Si / TCNQ structure was accompanied by an increase in the surface work function from 4.2 ± 0.1 eV to 4.7 ± 0.1 eV. Based on the results of TCS experiments, the DOUS function of the studied TCNQ film is constructed. To analyze the experimental DOUS, the orbital energies of the studied TCNQ molecules were calculated using the density functional theory (DFT) method at the B3LYP/6-31G(d) level, which was followed by the correction procedure and by the allowance for the condensed phase polarization energy. DOUS of the TCNQ films has four main maxima in the energy range studied. The DOUS maximum at an energy of 7.0 eV above EF is mainly formed by pi* orbitals. Three DOUS maxima located in the energy range from 8.0 eV to 20 eV above EF are formed by approximately the same number of pi* and sigma* type orbitals.

On the Linear Geometry of Lanthanide Hydroxide (Ln—OH, Ln=La-Lu)

Lanthanide hydroxides are key species in a variety of catalytic processes and in the preparation of corresponding oxides. This work explores the fundamental structure and bonding of the simplest lanthanide hydroxide, LnOH (Ln=La-Lu), using density functional theory calculations. Interestingly, the calculations predict that all structures of this series will be linear. Furthermore, these results indicate a valence electron configuration featuring an occupied sigma orbital and two occupied pi orbitals for all LnOH compounds, suggesting that the lanthanide-hydroxide bond is best characterized as a covalent triple bond.

On the Linear Geometry of Lanthanide Hydroxide (Ln—OH, Ln=La-Lu)

Lanthanide hydroxides are key species in a variety of catalytic processes and in the preparation of corresponding oxides. This work explores the fundamental structure and bonding of the simplest lanthanide hydroxide, LnOH (Ln=La-Lu), using density functional theory calculations. Interestingly, the calculations predict that all structures of this series will be linear. Furthermore, these results indicate a valence electron configuration featuring an occupied sigma orbital and two occupied pi orbitals for all LnOH compounds, suggesting that the lanthanide-hydroxide bond is best characterized as a covalent triple bond.

On the Linear Geometry of Lanthanide Hydroxide (Ln—OH, Ln=La-Lu)

Lanthanide hydroxides are key species in a variety of catalytic processes and in the preparation of corresponding oxides. This work explores the fundamental structure and bonding of the simplest lanthanide hydroxide, LnOH (Ln=La-Lu), using density functional theory calculations. Interestingly, the calculations predict that all structures of this series will be linear. Furthermore, these results indicate a valence electron configuration featuring an occupied sigma orbital and two occupied pi orbitals for all LnOH compounds, suggesting that the lanthanide-hydroxide bond is best characterized as a covalent triple bond.

On the Linear Geometry of Lanthanide Hydroxide (Ln—OH, Ln=La-Lu)

Lanthanide hydroxides are key species in a variety of catalytic processes and in the preparation of corresponding oxides. This work explores the fundamental structure and bonding of the simplest lanthanide hydroxide, LnOH (Ln=La-Lu), using density functional theory calculations. Interestingly, the calculations predict that all structures of this series will be linear. Furthermore, these results indicate a valence electron configuration featuring an occupied sigma orbital and two occupied pi orbitals for all LnOH compounds, suggesting that the lanthanide-hydroxide bond is best characterized as a covalent triple bond.

Molecular-Wetting Control by Ultrasmooth Pentacene Buffer for High-crystallinity Organic Field-Effect Transistors

ABSTRACTOrganic thin film devices are of interest for a variety of forthcoming ubiquitous electronics applications. In order to build ubiquitous high-performance devices, it is necessary to fabricate crystalline thin films of various organic materials onto “ubiquitous substrates” that are dictated by applications. However, many organic thin films crystallize only on a limited selection of substrates. Unfortunately, promising organic molecules, which have a large overlap of pi-orbitals between molecules, cannot migrate freely on a substrate because of stronger cohesion between molecules than interaction between the molecule and the substrate. Therefore, enhancement of the molecule-substrate interaction, i.e. ‘molecular wettability’ should promote crystallization. We found that an ultrasmooth monolayer of pentacene (C22H14), which can be grown on many general dielectric substrates, changes the molecular wettability of a substrate for other poorly wettable organic materials. We also demonstrate that a field effect transistor (FET) using a crystalline C60 thin film on a pentacene-buffered substrate can have a mobility of 4.9 cm2/Vs, which is 5-fold higher than that of C60 FETs without the buffer. Molecular wetting-controlled substrates can thus offer a general solution to the fabrication of high-performance crystalline plastic and molecular electronics.