Enhanced Surface Passivation by Atomic Layer Deposited Al2O3 for Ultraviolet Sensitive Silicon Photomultipliers

2022 ◽  
pp. 1-1
Author(s):  
Yuguo Tao ◽  
Anna Erickson
Keyword(s):  
Surface Passivation ◽  
Atomic Layer ◽  
Silicon Photomultipliers ◽  
Enhanced Surface

scholarly journals Surface Passivation of Organometal Halide Perovskite by Atomic Layer Deposition: a Mechanism Investigation Enabling Efficient Inverted Planar Solar Cells

2021 ◽  
Author(s):  
Ran Zhao ◽  
Kai Zhang ◽  
Jiahao Zhu ◽  
Shuang Xiao ◽  
Wei Xiong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Layer Deposition ◽  
High Efficiency ◽  
Surface Passivation ◽  
Perovskite Solar Cells ◽  
Wide Band ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Halide Perovskite ◽  
Interface Passivation

Interface passivation is of the pivot to achieve high-efficiency organic metal halide perovskite solar cells (PSCs). Atomic layer deposition (ALD) of wide band gap oxides has recently shown great potential...

scholarly journals Surface passivation of n-type doped black silicon by atomic-layer-deposited SiO2/Al2O3 stacks

2017 ◽  
Vol 110 (26) ◽  
pp. 263106 ◽  
Author(s):  
B. W. H. van de Loo ◽  
A. Ingenito ◽  
M. A. Verheijen ◽  
O. Isabella ◽  
M. Zeman ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Atomic Layer ◽  
Black Silicon

Silicon surface passivation using thin HfO2 films by atomic layer deposition

2015 ◽  
Vol 357 ◽  
pp. 635-642 ◽  
Author(s):  
Jhuma Gope ◽  
Vandana ◽  
Neha Batra ◽  
Jagannath Panigrahi ◽  
Rajbir Singh ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Silicon Surface Passivation

scholarly journals Atomic layer deposited dielectric and/or semiconducting oxide bilayers for crystalline silicon surface passivation

2017 ◽  
Vol 124 ◽  
pp. 302-306 ◽  
Author(s):  
Jagannath Panigrahi ◽  
Vandana Panwar ◽  
Rajbir Singh ◽  
P.K. Singh
Keyword(s):  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Atomic Layer ◽  
Silicon Surface Passivation

scholarly journals Surface Passivation of MoO3 Nanorods by Atomic Layer Deposition toward High Rate Durable Li Ion Battery Anodes

2015 ◽  
Vol 7 (24) ◽  
pp. 13154-13163 ◽  
Author(s):  
B. Ahmed ◽  
Muhammad Shahid ◽  
D. H. Nagaraju ◽  
D. H. Anjum ◽  
Mohamed N. Hedhili ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
High Rate ◽  
Li Ion Battery ◽  
Layer Deposition ◽  
Li Ion

scholarly journals Stability of the surface passivation properties of atomic layer deposited aluminum oxide in damp heat conditions

2019 ◽  
Author(s):  
Ismo T. S. Heikkinen ◽  
George Koutsourakis ◽  
Sebastian Wood ◽  
Ville Vähänissi ◽  
Fernando A. Castro ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Surface Passivation ◽  
Atomic Layer

scholarly journals Temperature-dependent photoluminescence properties of porous fluorescent SiC

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Weifang Lu ◽  
Abebe T. Tarekegne ◽  
Yiyu Ou ◽  
Satoshi Kamiyama ◽  
Haiyan Ou
Keyword(s):  
Surface Passivation ◽  
Surface States ◽  
Atomic Layer ◽  
Emission Peak ◽  
Photoelectron Spectra ◽  
Porous Structures ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Pl Emission ◽  
Temperature Dependent Photoluminescence

Abstract A comprehensive study of surface passivation effect on porous fluorescent silicon carbide (SiC) was carried out to elucidate the luminescence properties by temperature dependent photoluminescence (PL) measurement. The porous structures were prepared using an anodic oxidation etching method and passivated by atomic layer deposited (ALD) Al2O3 films. An impressive enhancement of PL intensity was observed in porous SiC with ALD Al2O3, especially at low temperatures. At temperatures below 150 K, two prominent PL emission peaks located at 517 nm and 650 nm were observed. The broad emission peak at 517 nm was attributed to originate from the surface states in the porous structures, which was supported by X-ray photoelectron spectra characterization. The emission peak at 650 nm is due to donor-acceptor-pairs (DAP) recombination via nitrogen donors and boron-related double D-centers in fluorescent SiC substrates. The results of the present work suggest that the ALD Al2O3 films can effectively suppress the non-radiative recombination for the porous structures on fluorescent SiC. In addition, we provide the evidence based on the low-temperature time-resolved PL that the mechanism behind the PL emission in porous structures is mainly related to the transitions via surface states.

Thermal atomic layer deposition of AlOxNy thin films for surface passivation of nano-textured flexible silicon

2019 ◽  
Vol 193 ◽  
pp. 231-236 ◽  
Author(s):  
Piyush K. Parashar ◽  
S.A. Kinnunen ◽  
T. Sajavaara ◽  
J. Jussi Toppari ◽  
Vamsi K. Komarala
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Passivation ◽  
Atomic Layer ◽  
Layer Deposition
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