Chemistry of Point Defect in Silicon and its Applications in Semiconductor Technology

The chemistry of the interactions between point defects and impurities is discussed by considering first the general thermodynamic and kinetic aspects of these reactions, deserving major attention to the identity of of the stable chemical species eventually formed and to the boundary conditions for diffusion controlled and reaction controlled interaction processes.The second part of the paper is instead dedicated to the analysis of the chemistry of carbon, oxygen, hydrogen and point defects in silicon, which is a system of major technological interest.We postulate that at low enough temperatures, when homogeneous nucleation processes are slow, spinodal decomposition assists oxygen aggregation phenomena. We postulate, also, on the basis of the existing knowledge, that carbon and hydrogen favour alternative reaction paths for oxygen in the due of clustering processes and discuss the hydrogen-enhanced oxygen diffusivity in the frame of a conventional trapping model.

Certain Problems with the Application of Stochastic Diffusion Processes for the Description of Chemical Engineering Phenomena. Formulation of Boundary Conditions in Flow Systems

Problems associated with the formulation of the boundary conditions for diffusion equations describing flow-through chemical-engineering systems from the point of view of stochastic process theory are discussed. An approach to modelling such systems is presented, allowing the one-dimensional diffusion (dispersion) model of a continuous flow mixer, commonly used in chemical engineering, to be reassessed from a rather general point of view.