scholarly journals High Aspect Ratio, Vertical Bipolar Junction Transistor NPN Device Fault Isolation & Analysis Techniques

2021 ◽  
Author(s):  
Kevin Distelhurst ◽  
Dan Bader
Keyword(s):  
Aspect Ratio ◽  
Failure Analysis ◽  
Analog Circuits ◽  
High Aspect Ratio ◽  
Analog Circuit ◽  
Fault Isolation ◽  
Nanometer Scale ◽  
Bipolar Junction Transistor ◽  
Performance Improvements ◽  
Junction Transistor

Abstract Analog components are still an important aspect of our society's electronic portfolio. They play a role in the emerging and expanding 5G electronic industry, for instance. The NPN bipolar junction transistor (BJT) is the foundation of many analog circuits and has continually evolved to meet more demanding specifications [1], [2]. Certain embodiments of these NPNs pose difficulties in failure analysis. One such embodiment is a vertical NPN BJT with high aspect ratio dimensions. Specifically, the dimensions involved are nanometer thick NP & PN junctions that extend microns in length. These dimensions provide desired performance improvements but a subtle, nanometer scale defect present anywhere along this length can cause substantial electrical shifts detrimental to an analog circuit. Several simple and complex techniques using common failure analysis tools can isolate these defects as discussed in this paper.

Formation of GaN Self-Organized Nanotips by Nanomasking Effect

2001 ◽  
Vol 707 ◽  
Author(s):  
Harumasa Yoshida ◽  
Tatsuhiro Urushido ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Aspect Ratio ◽  
Formation Mechanism ◽  
High Aspect Ratio ◽  
Photoelectron Spectroscopy ◽  
Nanometer Scale ◽  
Xps Analysis ◽  
X Ray ◽  
Self Organized

ABSTRACTWe have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.

Formation of GaN Self-Organized Nanotips by Nanomasking Effect

2001 ◽  
Vol 693 ◽  
Author(s):  
Harumasa Yoshida ◽  
Tatsuhiro Urushido ◽  
Hideto Miyake ◽  
Kazumasa Hiramtsu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Aspect Ratio ◽  
Formation Mechanism ◽  
High Aspect Ratio ◽  
Photoelectron Spectroscopy ◽  
Nanometer Scale ◽  
Xps Analysis ◽  
X Ray ◽  
Self Organized

AbstractWe have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures.

SYNCHROTRON-RADIATION-SUPPORTED HIGH-ASPECT-RATIO NANOFABRICATION

COSMOS ◽  
2007 ◽  
Vol 03 (01) ◽  
pp. 79-88
Author(s):  
A. CHEN ◽  
G. LIU ◽  
L. K. JIAN ◽  
HERBERT O. MOSER
Keyword(s):  
Synchrotron Radiation ◽  
Aspect Ratio ◽  
Light Source ◽  
Process Parameters ◽  
High Aspect Ratio ◽  
Radiation Spectrum ◽  
Nanometer Scale ◽  
X Ray ◽  
Preliminary Results ◽  
Synchrotron Light

X-ray lithography with synchrotron radiation is an important nanolithographic tool which has unique advantages in the production of high aspect ratio nanostructures. The optimum synchrotron radiation spectrum for nanometer scale X-ray lithography is normally in the range of 500 eV to 2 keV. In this paper, we present the main methods, equipment, process parameters and preliminary results of nanofabrication by proximity X-ray lithography within the nanomanufacturing program pursued by Singapore Synchrotron Light Source (SSLS). Nanostructures with feature sizes down to 200 nm and an aspect ratio up to 10 have been successfully achieved by this approach.

Radial Basis Function Networks for Analog Circuit Fault Isolation

1997 ◽  
Vol 07 (06) ◽  
pp. 643-655 ◽  
Author(s):  
N. S. C. Babu ◽  
V. C. Prasad
Keyword(s):  
Neural Network ◽  
Radial Basis Function ◽  
Analog Circuits ◽  
Basis Function ◽  
Analog Circuit ◽  
Selection Procedure ◽  
Fault Isolation ◽  
Fault Dictionary ◽  
Rbf Network ◽  
Radial Basis

The application of a radial basis function neural network (RBFN) for analog circuit fault isolation is presented. In this method the RBFN replaces the fault dictionary of analog circuits. The proposed method for analog circuit fault isolation takes the advantage of extremely fast training of RBFN compared to earlier neural network methods. A method is suggested to select centers and widths of RBF units. This selection procedure accounts for the component tolerances. The effectiveness of the RBFN for the fault isolation problem is demonstrated with an illustrative example. RBFN performed well even when the input patterns are drawn directly from the test node voltages of the analog circuit under consideration. A method is suggested to modify the RBF network in the event of occurrence of a new fault. The suggested modifications do not affect the previous training.

Advanced FIB CE Combined with Static Analysis for Functional Failure Analysis

2013 ◽  
Author(s):  
S.K. Loh ◽  
C.Q. Chen ◽  
K.H. Yip ◽  
A.C.T. Quah ◽  
X. Tao ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Static Analysis ◽  
Electrical Behavior ◽  
Functional Failure ◽  
Bipolar Junction Transistor ◽  
Root Cause ◽  
Soft Failure ◽  
Junction Transistor ◽  
Special Challenge

Abstract It is difficult to simulate functional failures using static analysis tools, therefore, debugging and troubleshooting devices with functional failures present a special challenge for failure analysis (FA) work and often result in a root-cause success rate is quite low. In this paper, the application of advanced FIB circuit edit (CE) processes combined the static FA analysis yielded successful localization of a bipolar junction transistor (BJT) device soft failure. Additional FA techniques were incorporated within the FA flow, resulting in characterization of the electrical behavior of a suspected transistor and detection of an abnormal implant profile within the active area.

Time Domain Nanoprobe Analysis of RTS Popcorn Noise in Analog Circuits

2018 ◽  
Author(s):  
Randal Mulder
Keyword(s):  
Failure Analysis ◽  
Threshold Voltage ◽  
Time Domain ◽  
Analog Circuits ◽  
Semiconductor Manufacturing ◽  
Analog Circuit ◽  
Bipolar Transistor ◽  
Random Telegraph Signal ◽  
Base Current ◽  
Analysis Methodology

Abstract Random Telegraph Signal (RTS), also described as popcorn noise in semiconductor analog circuits occurs when there is a sudden step in threshold voltage for a MOSFET or sudden step in base current for a bipolar transistor. The causes of popcorn noise can be process-related in semiconductor manufacturing. This paper presents a nanoprobe analysis methodology that was able to detect popcorn noise issues in discrete transistors causing analog circuit failure. The results presented for two different devices obtained similar results proving that the analysis methodology is viable for detecting popcorn noise issues in semiconductor MOSFET transistors. From a failure analysis perspective, the purpose of this paper is to provide the ability and a methodology to detect a signal that differentiates a failing transistor (popcorn noise) from a non-failing transistor (no popcorn noise). In this regard, the ability to obtain these results was not only unexpected but also very successful.

Unique dc characteristics of a new gated lateral pnp bipolar junction transistor (BJT) using 0.8 μm BiCMOS technology

1996 ◽  
Vol 74 (S1) ◽  
pp. 189-194 ◽  
Author(s):  
M. J. Deen ◽  
Z. X. Yan
Keyword(s):  
Analog Circuit ◽  
Current Gain ◽  
Conversion Gain ◽  
New Device ◽  
Bipolar Junction Transistor ◽  
Dc Characteristics ◽  
Bicmos Technology ◽  
Junction Transistor ◽  
Rf Signal

In this paper, the detailed device dc performance of a gated lateral pnp (LPNP) device that has five terminals, collector C, base B, emitter E, gate G, and substrate S, and is fabricated in a 0.8 μm BiCMOS technology is described. Because this gated LPNP has two inputs and one output, it shows unique dc characteristics of variable current gain, βF, of 102 ~ 104 with VG variations of 0.4 to – 0.4 V; variable transconductance, gM, which increases 3 ~ 10 times as VE increases from 0.4 to 0.7 V. Based on these unique features, this new device is attractive for some analog circuit applications; for example, when used as a mixer, it has a conversion gain of 5–12 dB for an input RF signal up to 400 MHz.

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