Влияние фтора на плотность состояний на границе раздела анодный оксидный слой/In-=SUB=-0.53-=/SUB=-Ga-=SUB=-0.47-=/SUB=-As

It is shown that the fluorine-containing anodic layers on the n-In0.53Ga0.47As surface, in contrast to the anodic layers without fluorine, form a SiO2/InGaAs interface with an unpinned Fermi level, the state density on which decreases during annealing at a temperature of 300 °C to values (2-4) 1011 and (4-5) 1012 eV-1cm-2 near conduction band bottom and the band gap middle, respectively. An increase in the annealing temperature leads to a reverse increase in the state density (350 ºС) and pinning of the Fermi level (400 ºС).

Identification and Detailed Characterization of Metal Oxide Powders as a Fundamental Chemical Product

Here we propose a method for identification and detailed characterization of metal-oxide powders with patterns of energy-resolved density of electron traps (ERDT) and conduction-band bottom (CBB) position, as a fingerprint, measured by newly developed reversed double-beam photoacoustic spectroscopy (RDB-PAS).

First-Principles Studies on Electronic Structures of ZnO

Geometric structure and electronic structure of wurtzite ZnO have been calculated adopting first principle plane wave ultrosoft pseudo potential method based on density functional theory, and band structure, electronic state density, differential charge distribution of ZnO have been subjected to systematic analysis, the results of which show that ZnO is a type of wide gap and direct gap semiconductor, with conduction band bottom and valence band top at the point Γ of Brillouin zone and valence band top showing obvious triply degenerateΓ7、Γ9、Γ7,while conduction band bottom beingΓ7. electronic structure calculation shows that Zn 3d narrow orbit between-6 and-4 eV has been fully filled with electrons and that O 2p wide orbit between-4 and 0 eV has also been fully filled with electron. In addition, charge density calculation shows that ZnO is metal oxide semiconductor with hybrid bond characterized by high ionicity and low covalent bond, accordingly, the above mentioned findings are superior to value of calculation mentioned in some documents.