First-Principles Studies on Electronic Structures of ZnO

2014 ◽  
Vol 926-930 ◽  
pp. 444-447
Author(s):  
Fu Chun Zhang ◽  
Xian Hui Zhong ◽  
Xing Xiang Ruan ◽  
Wei Hu Zhang
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Conduction Band ◽  
Density Functional ◽  
Covalent Bond ◽  
Potential Method ◽  
State Density ◽  
Conduction Band Bottom ◽  
Oxide Semiconductor ◽  
Systematic Analysis

Geometric structure and electronic structure of wurtzite ZnO have been calculated adopting first principle plane wave ultrosoft pseudo potential method based on density functional theory, and band structure, electronic state density, differential charge distribution of ZnO have been subjected to systematic analysis, the results of which show that ZnO is a type of wide gap and direct gap semiconductor, with conduction band bottom and valence band top at the point Γ of Brillouin zone and valence band top showing obvious triply degenerateΓ7、Γ9、Γ7,while conduction band bottom beingΓ7. electronic structure calculation shows that Zn 3d narrow orbit between-6 and-4 eV has been fully filled with electrons and that O 2p wide orbit between-4 and 0 eV has also been fully filled with electron. In addition, charge density calculation shows that ZnO is metal oxide semiconductor with hybrid bond characterized by high ionicity and low covalent bond, accordingly, the above mentioned findings are superior to value of calculation mentioned in some documents.

First-Principles Calculations on the Electronic Structure of ZnO Nanowires

2012 ◽  
Vol 198-199 ◽  
pp. 23-27
Author(s):  
Nan Zhang ◽  
Hong Sheng Zhao ◽  
Dong Yang ◽  
Wen Jie Yan
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Valence Band ◽  
Conduction Band ◽  
First Principles ◽  
Density Functional ◽  
Valence Band Maximum ◽  
Zno Nanowires ◽  
Cross Sectional ◽  
Quantum Size

Based upon the density functional theory (DFT) in this paper, the first-principles approach is used to study the electronic structure of different cross-sectional diameters of ZnO [0001] nanowires of wurtzite structure. The results show that ZnO [0001] nanowires have a wide direct band gap. Located in the G-point of the Brillouin zone the conduction band minimum and valence band maximum are relatively smooth. The conduction band is mainly composed of Zn 4s and Zn 4p states, and the valence band is composed of Zn 3d and O 2p states. The effective mass of conduction band electrons and valence band holes are large while their mobility is very low which show that conductive ability of pure defect-free [0001] ZnO nanowires is weak. Along with the increase of the cross-sectional diameters, the band gap gradually decreases that indicates quantum size effects are obvious in the nano size range.

A STUDY ON STRAIN AFFECTING ELECTRONIC STRUCTURE OF WURTZITE ZnO BY FIRST PRINCIPLES

2009 ◽  
Vol 23 (19) ◽  
pp. 2339-2352 ◽  
Author(s):  
LI BIN SHI ◽  
SHUANG CHENG ◽  
RONG BING LI ◽  
LI KANG ◽  
JIAN WEI JIN ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Electronic Structure ◽  
Band Structure ◽  
Valence Band ◽  
Density Of States ◽  
First Principles ◽  
Density Functional ◽  
Functional Theory ◽  
Electron Density Difference ◽  
Different Strains

Density of states and band structure of wurtzite ZnO are calculated by the CASTEP program based on density functional theory and plane-wave pseudopotential method. The calculations are carried out in axial and unaxial strains, respectively. The results of density of states in different strains show that the bottom of the conduction band is always dominated by Zn 4s, and the top of valence band is always dominated by O 2p. The variation of the band gap calculated from band structure is also discussed. In addition, p-d repulsion is used in investigating the variation of the top of the valence band in different strains and the results can be verified by electron density difference.

scholarly journals Ab initioStudies of Electronic Structure of Defects in PbTe

2005 ◽  
Vol 864 ◽  
Author(s):  
Salameh Ahmad ◽  
Daniel Bilc ◽  
S.D. Mahanti ◽  
M.G. Kanatzidis
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Conduction Band ◽  
Density Of States ◽  
Resonance State ◽  
Interesting Case ◽  
The Other ◽  
Defect States ◽  
Strong Resonance ◽  
Structure Calculations

AbstractAb initioelectronics structure calculations have been carried out in a series of RPb2n-1Te2n, n=16, compounds to understand the nature of “defect” states introduced by R where R = vacancy, monovalent Na, K, Rb, Cs, Ag atoms and divalent Cd atoms. We find that the density of states (DOS) near the top of the valence band and the bottom of the conduction band get significantly modified. The Na atom seems to perturb this region least (ideal acceptor in PbTe) and the other monovalent atoms enhance the DOS near the top of the valence band. Cd is an interesting case, since it introduces a strong resonance state near the bottom of the conduction band.

Bulk and Surface Electronic Structure of GaN Measured Using Angle-Resolved Photoemission, Soft X-ray Emission and Soft X-ray Absorption

1996 ◽  
Vol 449 ◽  
Author(s):  
Kevin E. Smith ◽  
Sarnjeet S Dhesi ◽  
Laurent-C. Duda ◽  
Cristian B Stagarescu ◽  
J. H. Guo ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Absorption Spectra ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Emission Spectra ◽  
Partial Density ◽  
High Symmetry ◽  
X Ray ◽  
X Ray Absorption

ABSTRACTThe electronic structure of thin film wurtzite GaN has been studied using a combination of angle resolved photoemission, soft x-ray absorption and soft x-ray emission spectroscopies. We have measured the bulk valence and conduction band partial density of states by recording Ga L- and N K- x-ray emission and absorption spectra. We compare the x-ray spectra to a recent ab initio calculation and find good overall agreement. The x-ray emission spectra reveal that the top of the valence band is dominated by N 2p states, while the x-ray absorption spectra show the bottom of the conduction band as a mixture of Ga 4s and N 2p states, again in good agreement with theory. However, due to strong dipole selection rules we can also identify weak hybridization between Ga 4s- and N 2p-states in the valence band. Furthermore, a component to the N K-emission appears at approximately 19.5 eV below the valence band maximum and can be identified as due to hybridization between N 2p and Ga 3d states. We report preliminary results of a study of the full dispersion of the bulk valence band states along high symmetry directions of the bulk Brillouin zone as measured using angle resolved photoemission. Finally, we tentatively identify a non-dispersive state at the top of the valence band in parts of the Brillouin zone as a surface state.

Study on Electronic Structure of GaN under Pressure

2014 ◽  
Vol 900 ◽  
pp. 217-221
Author(s):  
Xing Xiang Ruan ◽  
Xian Hui Zhong ◽  
Fu Chun Zhang ◽  
Wei Hu Zhang
Keyword(s):  
Electronic Structure ◽  
Density Functional ◽  
Energy Gap ◽  
Potential Method ◽  
High Energy ◽  
Functional Theory ◽  
Conduction Bands ◽  
The Density Functional Theory ◽  
The Relationship ◽  
Pseudo Potential

A detailed theoretical study of electronic structure and optical properties of GaN under pressure was performed by the first-principles calculations of plane wave ultra-soft pseudo-potential method based on the density functional theory (DFT). The results indicate that Ga-N bond length becomes shorter and the valence bonds shift towards the low energy while the conduction bands towards high energy, the band gap becomes wider with the pressure increasing, and theoretical studies explained the relationship between the band edges, energy gap of GaN and pressure. In addition, the peak in band was cracked slightly, and the Ga 3d-N 2p hybridization was enhanced.

scholarly journals Влияние фтора на плотность состояний на границе раздела анодный оксидный слой/In-=SUB=-0.53-=/SUB=-Ga-=SUB=-0.47-=/SUB=-As

2021 ◽  
Vol 47 (10) ◽  
pp. 11
Author(s):  
М.С. Аксенов ◽  
Н.А. Валишева ◽  
А.П. Ковчавцев
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Conduction Band ◽  
Annealing Temperature ◽  
State Density ◽  
The State ◽  
Conduction Band Bottom

It is shown that the fluorine-containing anodic layers on the n-In0.53Ga0.47As surface, in contrast to the anodic layers without fluorine, form a SiO2/InGaAs interface with an unpinned Fermi level, the state density on which decreases during annealing at a temperature of 300 °C to values (2-4) 1011 and (4-5) 1012 eV-1cm-2 near conduction band bottom and the band gap middle, respectively. An increase in the annealing temperature leads to a reverse increase in the state density (350 ºС) and pinning of the Fermi level (400 ºС).

scholarly journals Theoretical investigation on $$\hbox {BeN}_{{2}}$$ monolayer for an efficient bifunctional water splitting catalyst

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
M. R. Ashwin Kishore ◽  
R. Varunaa ◽  
Amirhossein Bayani ◽  
Karin Larsson
Keyword(s):  
Water Splitting ◽  
Valence Band ◽  
Conduction Band ◽  
Theoretical Investigation ◽  
Density Functional ◽  
Density Functional Theory Calculations ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Substantial Impact ◽  
Solar Hydrogen Production

AbstractThe search for an active, stable, and abundant semiconductor-based bifunctional catalysts for solar hydrogen production will make a substantial impact on the sustainable development of the society that does not rely on fossil reserves. The photocatalytic water splitting mechanism on a $$\hbox {BeN}_{{2}}$$ BeN 2 monolayer has here been investigated by using state-of-the-art density functional theory calculations. For all possible reaction intermediates, the calculated changes in Gibbs free energy showed that the oxygen evolution reaction will occur at, and above, the potential of 2.06 V (against the NHE) as all elementary steps are exergonic. In the case of the hydrogen evolution reaction, a potential of 0.52 V, or above, was required to make the reaction take place spontaneously. Interestingly, the calculated valence band edge and conduction band edge positions for a $$\hbox {BeN}_{{2}}$$ BeN 2 monolayer are located at the potential of 2.60 V and 0.56 V, respectively. This indicates that the photo-generated holes in the valence band can oxidize water to oxygen, and the photo-generated electrons in the conduction band can spontaneously reduce water to hydrogen. Hence, the results from the present theoretical investigation show that the $$\hbox {BeN}_{{2}}$$ BeN 2 monolayer is an efficient bifunctional water-splitting catalyst, without the need for any co-catalyst.

scholarly journals Electronic Structure of Hydrogenated and Surface-Modified GaAs Nanocrystals: Ab Initio Calculations

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Hamsa Naji Nasir ◽  
Mudar A. Abdulsattar ◽  
Hayder M. Abduljalil
Keyword(s):  
Electronic Structure ◽  
Ab Initio ◽  
Valence Band ◽  
Density Functional ◽  
Energy Gap ◽  
Unit Cell ◽  
Large Unit ◽  
Geometrical Optimization ◽  
Large Unit Cell ◽  
Core Part

Two methods are used to simulate electronic structure of gallium arsenide nanocrystals. The cluster full geometrical optimization procedure which is suitable for small nanocrystals and large unit cell that simulates specific parts of larger nanocrystals preferably core part as in the present work. Because of symmetry consideration, large unit cells can reach sizes that are beyond the capabilities of first method. The two methods use ab initio Hartree-Fock and density functional theory, respectively. The results show that both energy gap and lattice constant decrease in their value as the nanocrystals grow in size. The inclusion of surface part in the first method makes valence band width wider than in large unit cell method that simulates the core part only. This is attributed to the broken symmetry and surface passivating atoms that split surface degenerate states and adds new levels inside and around the valence band. Bond length and tetrahedral angle result from full geometrical optimization indicate good convergence to the ideal zincblende structure at the centre of hydrogenated nanocrystal. This convergence supports large unit cell methodology. Existence of oxygen atoms at nanocrystal surface melts down density of states and reduces energy gap.

scholarly journals Photocatalytical Properties and Theoretical Analysis of N, Cd-Codoped TiO2Synthesized by Thermal Decomposition Method

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
Hongtao Gao ◽  
Bing Lu ◽  
Fangfang Liu ◽  
Yuanyuan Liu ◽  
Xian Zhao
Keyword(s):  
Thermal Decomposition ◽  
Theoretical Analysis ◽  
Valence Band ◽  
Conduction Band ◽  
Photoelectron Spectroscopy ◽  
Decomposition Method ◽  
Density Functional ◽  
X Ray ◽  
Thermal Decomposition Method ◽  
Bet Specific Surface Area

N, Cd-codoped TiO2have been synthesized by thermal decomposition method. The products were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), UV-visible diffuse reflectance spectra (DRS), X-ray photoelectron spectroscopy (XPS), and Brunauer-Emmett-Teller (BET) specific surface area analysis, respectively. The products represented good performance in photocatalytic degradation of methyl orange. The effect of the incorporation of N and Cd on electronic structure and optical properties of TiO2was studied by first-principle calculations on the basis of density functional theory (DFT). The impurity states, introduced by N 2p or Cd 5d, lied between the valence band and the conduction band. Due to dopants, the band gap of N, Cd-codoped TiO2became narrow. The electronic transition from the valence band to conduction band became easy, which could account for the observed photocatalytic performance of N, Cd-codoped TiO2. The theoretical analysis might provide a probable reference for the experimentally element-doped TiO2synthesis.

scholarly journals Investigation on Mg3Sb2/Mg2Si Heterogeneous Nucleation Interface Using Density Functional Theory

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1681
Author(s):  
Mingjie Wang ◽  
Guowei Zhang ◽  
Hong Xu ◽  
Yizheng Fu
Keyword(s):  
Density Functional Theory ◽  
Electronic Structure ◽  
Interfacial Energy ◽  
Heterogeneous Nucleation ◽  
Density Functional ◽  
Covalent Bond ◽  
Work Of Adhesion ◽  
Partial Density ◽  
Hollow Site ◽  
Functional Theory

In this study, the cohesive energy, interfacial energy, electronic structure, and bonding of Mg2Si (111)/Mg3Sb2 (0001) were investigated by using the first-principles method based on density functional theory. Meanwhile, the mechanism of the Mg3Sb2 heterogeneous nucleation potency on Mg2Si grains was revealed. The results indicated that the Mg3Sb2 (0001) slab and the Mg2Si (111) slab achieved bulk-like characteristics when the atomic layers N ≥ 11, and the work of adhesion of the hollow-site (HCP) stacking structure (the interfacial Sb atom located on top of the Si atom in the second layer of Mg2Si) was larger than that of the other stacking structures. For the four HCP stacking structures, the Sb-terminated Mg3Sb2/Si-terminated Mg2Si interface with a hollow site showed the largest work of adhesion and the smallest interfacial energy, which implied the strongest stability among 12 different interface models. In addition, the difference in the charge density and the partial density of states indicated that the electronic structure of the Si-HCP-Sb interface presented a strong covalent, and the bonding of the Si-HCP-Mg interface and the Mg-HCP-Sb interface was a mixture of a covalent bond and a metallic bond, while the Mg-HCP-Mg interfacial bonding corresponded to metallicity. As a result, the Mg2Si was conducive to form a nucleus on the Sb-terminated-hollow-site Mg3Sb2 (0001) surface, and the Mg3Sb2 particles promoted the Mg2Si heterogeneous nucleation, which was consistent with the experimental expectations.

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