semiconductor device analyzer
Recently Published Documents


TOTAL DOCUMENTS

4
(FIVE YEARS 0)

H-INDEX

1
(FIVE YEARS 0)

2017 ◽  
Vol 24 (6) ◽  
pp. 875-881
Author(s):  
Sigit Tri Wicaksono ◽  
Shih-Hsuan Chiu ◽  
Kun-Ting Chen ◽  
Sheng-Hong Pong

AbstractThe acrylate-based photopolymer consists of tetra-functional polyester acrylate (TPA), and hexanediol diacrylate (HDDA) has been successfully composited with nano barium titanate (BaTiO3) and completely cured via a digital light processor RP machine. The degradation temperature, tensile strength, hardness, resistivity, and dielectric constant of samples were characterized by Thermo Gravimetric Analyzer Hi-Res TGA2950, Universal Tensile Machine JIA701, Hardness Shore D tester, Fluke 117 multimeter, and Agilent B1500A Semiconductor Device Analyzer, respectively. The morphology changes of the samples were also investigated using the JEOL JSM-6390LV scanning electron microscopy (SEM). The results show that the improvement of degradation temperature is not obvious. Furthermore, the modulus elasticity, hardness, and dielectric constant increase as the filler loading increases up to 2 phr, but the resistivity is vice versa. Interestingly, there is an inverse correlation between dielectric constant and resistivity of photopolymer/BaTiO3 nanocomposite.


2016 ◽  
Vol 16 (5) ◽  
pp. 266-272
Author(s):  
D. V. Ryazantsev ◽  
V. P. Grudtsov

Abstract An automatic MOS structure parameter extraction algorithm accounting for quantum effects has been developed and applied in the semiconductor device analyzer Agilent B1500A. Parameter extraction is based on matching the experimental C-V data with numerical modeling results. The algorithm is used to extract the parameters of test MOS structures with ultrathin gate dielectrics. The applicability of the algorithm for the determination of distribution function of DOS and finding the donor defect level in silicon is shown.


Sign in / Sign up

Export Citation Format

Share Document