Investigation of The Dielectric Properties Of (Cu, Tl) 1234 Added with Graphene

Superconducting samples of type (Cu­0.5Tl0.5)-1234 were prepared at normal pressure via one step of conventional solid state reaction technique, and added with x wt.% of graphene (0≤x≤0.1). X-ray powder diffraction (XRD) shows that the addition of graphene does not alter the tetragonal structure and the lattice parameters of the samples. Fourier Transform Infrared (FTIR) measurements indicate the non-uniform distribution of graphene inside the (Cu­0.5Tl0.5)-1234 phase. While the Scanning Electron Microscope (SEM) images reveal the increase of the inter-grain connectivity. The superconducting transition temperature Tc, obtained from Ac magnetic susceptibility measurements, shows an enhancement up to x=0.04 Wt. %, followed by a deterioration for x >0.04. The frequency dependence of the dielectric properties of the samples was experimentally investigated at different temperatures (110 K ≤ T ≤ 260 K). The real and imaginary parts (ε' and ε'') of dielectric constant increase up to x=0.1. The study of ε' and ε'', the dielectric loss (tan δ) and the ac-conductivity (σac) have shown that the variation of frequency, temperature and addition of graphene allows the tuning of these parameters for various applications.

Effect of nano-BaTiO3 on thermal, mechanical, and electrical properties of HDDA/TPA photopolymer prepared by a digital light processor RP machine

The acrylate-based photopolymer consists of tetra-functional polyester acrylate (TPA), and hexanediol diacrylate (HDDA) has been successfully composited with nano barium titanate (BaTiO3) and completely cured via a digital light processor RP machine. The degradation temperature, tensile strength, hardness, resistivity, and dielectric constant of samples were characterized by Thermo Gravimetric Analyzer Hi-Res TGA2950, Universal Tensile Machine JIA701, Hardness Shore D tester, Fluke 117 multimeter, and Agilent B1500A Semiconductor Device Analyzer, respectively. The morphology changes of the samples were also investigated using the JEOL JSM-6390LV scanning electron microscopy (SEM). The results show that the improvement of degradation temperature is not obvious. Furthermore, the modulus elasticity, hardness, and dielectric constant increase as the filler loading increases up to 2 phr, but the resistivity is vice versa. Interestingly, there is an inverse correlation between dielectric constant and resistivity of photopolymer/BaTiO3 nanocomposite.

Effect of High Density Polyethylene (HDPE) on Structural and Optical Properties of (PP/PMMA) Blends

In the present work, Polypropylene (PP) was blended with poly methyl methacrylate (PMMA) to form (PP/PMMA) polymer blends. High Density Polyethylene (HDPE) was mixed into these blends at different weight fractions (2,4,6,8) % wt to form (PP/PMMA/HDPE) blends were prepared using an one screw extruder. results obtained from Scanning Electron Microscopy (SEM) revealed that there was a reduction in surface roughness any decrease in clusters, drilling and bends, as for Fourier Transform Infrared (FT-IR) spectrometry showed no change in the wave numbers of the functional groups. The optical properties of samples are investigated by measuring optical absorption spectra in the wavelength range from 260 to 1100 nm. this results show that Eg of the blends increases with increasing high density polyethylene contents, the indirect optical band gaps for (PP/PMMA) and (PP/PMMA/HDPE) blends were estimated to be about 2.83,2.9,2.95,3and 3.1 eV for indirect allowed transitions, whereas the indirect forbidden band gaps were determined as 2,2.1,2.15,2.2 and 2.3 eV with increase high density Polyethylene contents, respectively. The absorbance, absorption coefficient, extinction coefficient and the imaginary dielectric constant of (PP/PMMA/HDPE) decreases with increasing of HDPE percentages except the transmittance, refraction index and real part of the dielectric constant increase with increasing of high density polyethylene.

Preparation and Electrical Properties of Ba2TiOSi2−xGexO7 (x=0.0 and 0.2) Ferroelectric Ceramics

Polycrystalline ceramic samples of pure and germanium (Ge4+) doped fresnoite of general formula Ba2TiOSi2−xGexO7 (x=0.0 and 0.2) have been prepared by solid state reaction technique. The formation of the single phase compound was confirmed by X-ray diffraction and the structural parameters were refined by the Rietveld refinement technique. The dc conductivity of both the materials has been measured as a function of temperature from room temperature to 753 K and activation energy was calculated using the relation σ = σoexp(-Ea/kt). The activation energy 4.74 eV obtained for the pure compound is very high in comparison with 1.47 eV of Ge4+-substituted compound. The frequency and temperature dependent dielectric behavior of both the compounds have been studied. The real and imaginary parts of the dielectric constant increase with the increase of temperature.

Ferroelectric and Dielectric Properties of La2O3-Doped BaTiO3 Ceramics

The different concentration La2O3-doped BaTiO3 ceramics were prepared by sol-gel method. The ferroelectric and dielectric properties of the ceramics are characterized by TF analyzer 2000. With the increased amount of La2O3-doped, the dielectric constant increase gradually, when the sintering temperature is 1250 °C, the dielectric constant has reached 4648 for La2O3 with 0.4％-doped. With the temperature increased the dielectric constant of La-BaTiO3 increase gradually, when the sintering temperature is 1290 °C, the dielectric constant has reached 7066 for La2O3 with 0.4％-doped.

The Effect of Thickness on Some Optical Properties of Sb2S3 Thin Films Prepared by Chemical Bath Deposition

Sb2S3 thin films have been prepared by chemical bath deposition on a glas sub Absorbance and transmittance spectra were recorded in the wavelength range (30-900) nm. The effects of thickness on absorption coefficient, reflectance, refractive index, extinction coefficient, real and imaginary parts of dielectric constant were estimated. It was found that the reflectivity, absorption coefficient , extinction coefficient, real part of dielectric constant and refractive index, all these parameters decrease as the thickness increased, while the imaginary part of the dielectric constant increase as the thickness increased.

Microstructure and Properties of AlN Matrix Composites Fabricated by Reaction Synthesis

Based on the nitridation reaction of aluminum with boron nitride (BN), aluminum nitride (AlN) matrix composites were fabricated by reaction synthesis technique. The effect of the amount of Al on the microstructure and properties was investigated. The bending strength, thermal conductivity and dielectric constant increase with the content of aluminum. A heat-treatment schedule was performed to investigate the effect of the microstructure on the properties. The results showed that the heat-treatment leads to the grain growth and thermal conductivity increase with the grain growth.