A tunnelling current through a trapezoidal barrier potential has been modelled. The transmittance is determined using the exponential wavefunction approach method. Furthermore, the transmittance is used to calculate the tunnelling current density by applying the Gauss-Laguerre quadrature method. The simulation results show the increasing bias voltage causes the raising tunnelling current, and an increase of temperature is proportional to the tunnelling current.
A tunnelling current through a trapezoidal barrier potential has been modelled. The transmittance is determined using the exponential wavefunction approach method. Furthermore, the transmittance is used to calculate the tunnelling current density by applying the Gauss-Laguerre quadrature method. The simulation results show the increasing bias voltage causes the raising tunnelling current, and an increase of temperature is proportional to the tunnelling current.
The problem of penetration by a conducting slab in tunnel junction metal-oxide interfaces is treated using a step model for the barrier. The dynamical conductance of a junction having a composed barrier (two sections with different widths but the same barrier heights) is calculated using a trapezoidal barrier model for each section. An unexpected increment of the barrier height is found when a very thin conducting slab penetrates the barrier of a junction.
A Modelling of Tunnelling Current through a Trapezoidal Potential Barrier by Using Exponential Wavefunction Approach
