Tidal deformation of quantum black holes

The response of a gravitating object to an external tidal field is encoded in its Love numbers, which identically vanish for classical black holes (BHs). Here we show, using standard time-independent quantum perturbation theory, that for a quantum BH, generically, the Love numbers are nonvanishing and negative. We calculate the quadrupolar electric quantum Love number of slowly rotating BHs and show that it depends most strongly on the first excited level of the quantum BH. Finally, we discuss the detectability of the quadrupolar quantum Love number in future precision gravitational-wave observations and show that, under favourable circumstances, its magnitude is large enough to imprint an observable signature on the gravitational waves emitted during the inspiral. Phase of two moderately spinning BHs.

The Influence of High-k Material/SiO2 Gate Stacks on Direct Gate Tunneling Current of Cylindrical Surrounding-Gate MOSFETs

In this paper, we present a model of gate tunneling current in cylindrical surrounding-gate MOSFETs through dual layer high-k dielectric/SiO2 stacks. The model was derived under a quantum perturbation theory by taking into account both structural and electrical confinement effects. The influences of high-k materials and SiO2 thickness on the gate tunneling current have been studied. The calculated results show that the HfO2 is the most effective high-k material to decrease the gate tunneling current. It is also shown that the gate tunneling current is reduced with the SiO2 thickness. In addition, the obtained tunneling currents are fitted well with those obtained under the self-consistent calculation.

Atomistic Simulations of Effect of Coulombic Interactions on Carrier Fluctuations in Doped Silicon

Carrier distributions associated with point charges in silicon solved with quantum perturbation theory are used to determine Coulombic interactions between charged defects in the presence of carrier screening. The resulting interactions are used in kinetic lattice Monte Carlo (KLMC) simulations of point defect-mediated diffusion to study dopant redistribution and associated variations in carrier concentration. Over a broad range of doping concentrations and temperatures, Coulombic repulsion between like dopants leads to ordering, resulting in a more uniform electrical potential distribution and therefore reduced variations in device performance compared with random doping, the standard condition assumed in previous doping fluctuation analyses.