Влияние температуры на морфологию планарных нанопроволок GaAs (моделирование)

Using a kinetic lattice Monte Carlo model, the self-catalyzed growth of planar GaAs nanowires was analyzed. The nanowire growth via the vapor-liquid-crystal mechanism was considered. The effect of temperature and the catalyst droplet location on the morphology and growth direction of planar GaAs nanowires was studied. For GaAs(111)A and GaAs(111)B substrates, a temperature range corresponding to stable growth of planar GaAs nanowires was revealed. The special asymmetric arrangement of droplets allows the one-directional nanowire growth.

Three-Dimensional ES Barrier Promotes the Steps Formation

Physical vapor deposition (PVD) has been an important method to synthesize metallic nanorods during the past two decades. Based on the main physical process of crystal growth, this letter made a growth model of metallic nanorods with kinetic lattice Monte Carlo (KLMC) method and studied the effects of three-dimensional (3D) Ehrlich–Schwoebel (ES) barrier during the metallic nanorods growth. According to the simulation results, a large 3D ES barrier affects the surface morphology apparently. With analyze the simulation results, 3D ES barrier promotes the step formation and increases the step height greatly, and it is the main factor of metallic nanorods formation.