pbte film
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2021 ◽  
Vol 1822 (1) ◽  
pp. 012014
Author(s):  
D.N. Bukharov ◽  
I.O. Scryabin ◽  
A.F. Lelekova ◽  
M.R. Sisoyev ◽  
S.M. Arakelian

2017 ◽  
Vol 15 (4) ◽  
pp. 043101-43103
Author(s):  
Lingmao Xu Lingmao Xu ◽  
Hui Zhou Hui Zhou ◽  
Yanchun He Yanchun He ◽  
Kaifeng Zhang Kaifeng Zhang ◽  
Shenghu Wu Shenghu Wu ◽  
...  

2010 ◽  
Vol 257 (1) ◽  
pp. 271-275
Author(s):  
S.Y. Ren ◽  
Y.K. Yang ◽  
H.D. Li ◽  
D.M. Li ◽  
X.Y. Lv ◽  
...  
Keyword(s):  

2004 ◽  
Vol 273 (1-2) ◽  
pp. 156-160 ◽  
Author(s):  
H.Y. Chen ◽  
S.S. Dong ◽  
Y.K. Yang ◽  
D.M. Li ◽  
J.H. Zhang ◽  
...  
Keyword(s):  

2001 ◽  
Vol 691 ◽  
Author(s):  
A. Jdanov ◽  
J. Pelleg ◽  
Z. Dashevsky ◽  
R. Shneck

ABSTRACTThin films of PbTe were deposited on Si (111) wafers and glass substrates at a constant power for different times and at a constant time at various power levels. In some cases substrate heating to a temperature of ∼673K was performed during sputtering. Structural analysis by Xray diffraction (XRD) and high-resolution electron microscopy (HRTEM) were performed. The composition of the PbTe film was evaluated by Auger depth profile. At an appropriate combination of power and deposition time only (200) and its higher order peaks were observed in the PbTe film. It is expected that it is feasible to obtain epitaxial PbTe film by RF magnetron sputtering.


1994 ◽  
Author(s):  
Su-ying Zhang ◽  
Ge-ya Wang ◽  
Tian-Shen Shi

1986 ◽  
Vol 40 (1) ◽  
pp. 7-12 ◽  
Author(s):  
R. A. A. Kubiak ◽  
S. R. L. McGlashan ◽  
R. M. King ◽  
E. H. C. Parker

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