matrix mode
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1984 ◽  
Vol 33 ◽  
Author(s):  
F. Okumura ◽  
S. Kaneko

ABSTRACTAn amorphous Si:H linear image sensor operated by a-Si:H TFT array has been proposed. This sensor consists of photodiode array, TFT array, matrix circuit, charge transfer capacitor, and external circuit. Mobility for TFT is 0.6 cm2/V.s and 5 μsec/bit read out time was obtained in the conventional matrix mode scanning. Moreover, a novel driving method is applied in order to improve the effective operation speed and an investigation for TFT noise was performed. Experimental data confirm the validity of the concept.


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