Amorphous Si:H Linear Image Sensor Operated by a-Si:H TFT Array

1984 ◽  
Vol 33 ◽  
Author(s):  
F. Okumura ◽  
S. Kaneko
Keyword(s):  
Experimental Data ◽  
Charge Transfer ◽  
Image Sensor ◽  
External Circuit ◽  
Operation Speed ◽  
Effective Operation ◽  
Photodiode Array ◽  
Matrix Mode

ABSTRACTAn amorphous Si:H linear image sensor operated by a-Si:H TFT array has been proposed. This sensor consists of photodiode array, TFT array, matrix circuit, charge transfer capacitor, and external circuit. Mobility for TFT is 0.6 cm2/V.s and 5 μsec/bit read out time was obtained in the conventional matrix mode scanning. Moreover, a novel driving method is applied in order to improve the effective operation speed and an investigation for TFT noise was performed. Experimental data confirm the validity of the concept.

Analysis of incomplete charge transfer effects in a CMOS image sensor

2013 ◽  
Vol 34 (5) ◽  
pp. 054009 ◽  
Author(s):  
Liqiang Han ◽  
Suying Yao ◽  
Jiangtao Xu ◽  
Chao Xu ◽  
Zhiyuan Gao
Keyword(s):  
Charge Transfer ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Transfer Effects

scholarly journals Энергетический спектр и оптическое поглощение эндоэдральных комплексов Er-=SUB=-2-=/SUB=-C-=SUB=-2-=/SUB=-@C-=SUB=-90-=/SUB=- на основе изомеров N 21 и N 44

2021 ◽  
Vol 129 (9) ◽  
pp. 1111
Author(s):  
А.И. Мурзашев ◽  
А.П. Жуманазаров ◽  
М.Ю. Кокурин
Keyword(s):  
Experimental Data ◽  
Charge Transfer ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Coulomb Interaction ◽  
Energy Spectra ◽  
Optical Absorption Spectra ◽  
Endohedral Complexes

The article simulates the optical absorption spectra (OAS) of endohedral complexes Er2C2 @ C90 based on isomers No. 44 (C2) No. 21 (C1) of fullerene C90. For this purpose, the energy spectra of the indicated isomers have been calculated. The calculation was carried out within the framework of two models. Within the framework of the first model, which is traditional, only hops of π-electrons from site to site were taken into account (the integral of hopping to the nearest sites B ~ -2.6 eV). Within the framework of the second model, developed in a series of our works [1-5], in addition to hopping from site to site (the integral of hopping to the nearest sites B ~ -1.0 eV), the intrasite Coulomb interaction (ICCI) of π-electrons was also taken into account (the integral of the Coulomb interaction U ~ 7.0 eV). Comparison of the OSS curves obtained by us with the experimental data [5] convincingly indicates that the second model adequately describes the OSS of the endohedral Er2C2 @ C90 complexes based on the investigated isomers. The magnitude of charge transfer from the Er2C2 system to the fullerene shell turned out to be -4e.

Analysis of Charge Transfer Loss in Dual Read-Out Registers Used for HDTV CCD Image Sensor

1988 ◽  
Author(s):  
Mamoru IESAKA ◽  
Shinji OSAWA ◽  
Shinji UYA ◽  
Yoshitaka EGAWA ◽  
Yoshiyuki MATSUNAGA ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Image Sensor ◽  
Ccd Image Sensor ◽  
Ccd Image

Label free CMOS DNA image sensor based on the charge transfer technique

2009 ◽  
Vol 24 (10) ◽  
pp. 3108-3112 ◽  
Author(s):  
Y. Maruyama ◽  
S. Terao ◽  
K. Sawada
Keyword(s):  
Charge Transfer ◽  
Image Sensor ◽  
Label Free

Amorphous Si:H Heterojunction Photodiode and its Application to a Compact Scanner

1985 ◽  
Vol 49 ◽  
Author(s):  
S. Kaneko ◽  
Y. Kajiwara ◽  
F. Okumura ◽  
T. Ohkubo
Keyword(s):  
Optical System ◽  
Dark Current ◽  
System Performance ◽  
Metal Structure ◽  
Image Sensor ◽  
Metal Contact ◽  
Performance Tests ◽  
Current Ratio ◽  
Photodiode Array

AbstractThis paper reports heterojunction photodiode properties and its application to a compact scanner. The photodiode has ITO / p-a-SiC:H / a-Si:H / metal structure. This diode has high photo to dark current ratio and small photocurrent saturation voltage, because of the excellent blocking characteristics for a heterojunction with large built in potential. Moreover, a-Si:H / metal contact has been investigated. A contact linear image sensor has been fabricated using the heterojunction photodiode array and compact optical system. Performance tests showed excellent results. Good reproduced images have been obtained.

Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node

2021 ◽  
Vol 30 (1) ◽  
pp. 018502
Author(s):  
Cui Yang ◽  
Guo-Liang Peng ◽  
Wei Mao ◽  
Xue-Feng Zheng ◽  
Chong Wang ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Temporary Storage
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