2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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136
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Published By IEEE

9781728105802, 9781728105819
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scholarly journals Time-Resolved Short Circuit Failure Analysis of SiC MOSFETs

2019 ◽  
Author(s):  
Thomas Ziemann ◽  
Alexander Tsibizov ◽  
Bhagyalakshmi Kakarla ◽  
Lorenz Bort ◽  
Ulrike Grossner
Keyword(s):  
Failure Analysis ◽  
Short Circuit ◽  
Time Resolved

Characterization of Dynamic $I_{\text{OFF}}$ in Schottky-Type $p$-GaN Gate HEMTs

2019 ◽  
Author(s):  
Yuru Wang ◽  
Jin Wei ◽  
Song Yang ◽  
Jiacheng Lei ◽  
Mengyuan Hua ◽  
...  
Keyword(s):  
Schottky Type

Influence of Carrier Lifetime on Silicon Carbide Power Devices for Pulsed Power Application

2019 ◽  
Author(s):  
Kun Zhou ◽  
Yingxing Cui ◽  
Lianghui Li ◽  
Yunfei Gu ◽  
Lin Zhang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Carrier Lifetime ◽  
Pulsed Power ◽  
Power Devices ◽  
Power Application

Ultra-high speed 7mohm, 650V SiC half-bridge module with robust short circuit capability for EV inverters

2019 ◽  
Author(s):  
Anup Bhalla ◽  
Melvin Nava ◽  
Mike Zhu ◽  
Frank Sudario ◽  
Deborah Sumaoang ◽  
...  
Keyword(s):  
High Speed ◽  
Short Circuit ◽  
Ultra High Speed

An Injection Enhanced LIGBT on Thin SOI Layer with Low ON-state Voltage

2019 ◽  
Author(s):  
Gaoqiang Deng ◽  
Xiaorong Luo ◽  
Diao Fan ◽  
Tao Sun ◽  
Bo Zhang

Experimental Demonstration on Superior Switching Characteristics of 1.2 kV SiC SWITCH-MOS

2019 ◽  
Author(s):  
Ruito Aiba ◽  
Masataka Okawa ◽  
Taiga Kanamori ◽  
Hiroshi Yano ◽  
Noriyuki Iwamuro ◽  
...  
Keyword(s):  
Experimental Demonstration ◽  
Switching Characteristics

Over Kilovolt GaN Vertical Super-Junction Trench MOSFET: Approach for Device Design and Optimization

2019 ◽  
Author(s):  
Peng Huang ◽  
Qi Zhou ◽  
Kuangli Chen ◽  
Xiaoqi Han ◽  
Dong Wei ◽  
...  
Keyword(s):  
Device Design ◽  
Design And Optimization
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