2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications

TOTAL DOCUMENTS

136

(FIVE YEARS 136)

H-INDEX

5

(FIVE YEARS 5)

Published By IEEE

9781728105802, 9781728105819

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Influence of Carrier Lifetime on Silicon Carbide Power Devices for Pulsed Power Application

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757643 ◽

2019 ◽

Author(s):

Kun Zhou ◽

Yingxing Cui ◽

Lianghui Li ◽

Yunfei Gu ◽

Lin Zhang ◽

...

Keyword(s):

Silicon Carbide ◽

Carrier Lifetime ◽

Pulsed Power ◽

Power Devices ◽

Power Application

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Feasibility and Limitation of DC/DC Multilevel Converter Power ICs Using Standard CMOS Transistors

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757654 ◽

2019 ◽

Author(s):

Runtao Ning ◽

Yuanfeng Zhou ◽

Aritra Kundu ◽

Z. John Shen

Keyword(s):

Multilevel Converter ◽

Cmos Transistors

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Ultra-high speed 7mohm, 650V SiC half-bridge module with robust short circuit capability for EV inverters

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757666 ◽

2019 ◽

Author(s):

Anup Bhalla ◽

Melvin Nava ◽

Mike Zhu ◽

Frank Sudario ◽

Deborah Sumaoang ◽

...

Keyword(s):

Short Circuit ◽

Ultra High Speed

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An Injection Enhanced LIGBT on Thin SOI Layer with Low ON-state Voltage

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757637 ◽

2019 ◽

Author(s):

Gaoqiang Deng ◽

Xiaorong Luo ◽

Diao Fan ◽

Tao Sun ◽

Bo Zhang

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Experimental Demonstration on Superior Switching Characteristics of 1.2 kV SiC SWITCH-MOS

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757628 ◽

2019 ◽

Author(s):

Ruito Aiba ◽

Masataka Okawa ◽

Taiga Kanamori ◽

Hiroshi Yano ◽

Noriyuki Iwamuro ◽

...

Keyword(s):

Experimental Demonstration ◽

Switching Characteristics

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Over Kilovolt GaN Vertical Super-Junction Trench MOSFET: Approach for Device Design and Optimization

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757688 ◽

2019 ◽

Author(s):

Peng Huang ◽

Qi Zhou ◽

Kuangli Chen ◽

Xiaoqi Han ◽

Dong Wei ◽

...

Keyword(s):

Device Design ◽

Design And Optimization

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Foreseeable Industrial Changes of Automotive and Transportation Driven by Semiconductors

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757592 ◽

2019 ◽

Author(s):

Tsuguo Nobe

Keyword(s):

Automotive And Transportation

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Repetitive Short Circuit Energy Dependent $V_{\text{TH}}$ Instability of 1.2kV SiC Power MOSFETs

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757639 ◽

2019 ◽

Author(s):

Jiahui Sun ◽

Jin Wei ◽

Zheyang Zheng ◽

Yuru Wang ◽

Kevin J. Chen

Keyword(s):

Short Circuit ◽

Power Mosfets ◽

Energy Dependent

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Analysis of Degradation Phenomena in Bipolar Degradation Screening Process for SiC-MOSFETs

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757598 ◽

2019 ◽

Author(s):

Takashi Ishigaki ◽

Tatsunori Murata ◽

Koyo Kinoshita ◽

Takahiro Morikawa ◽

Tetsuo Oda ◽

...

Keyword(s):

Screening Process

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Short-Circuit Robustness of 4600 V SiC DMOSFETs

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757686 ◽

2019 ◽

Author(s):

Siddarth Sundaresan ◽

Stoyan Jeliazkov ◽

Vamsi Mulpuri ◽

Ranbir Singh ◽

Sumit Jadav

Keyword(s):

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