Characterization of Dynamic $I_{\text{OFF}}$ in Schottky-Type $p$-GaN Gate HEMTs

2019 ◽  
Author(s):  
Yuru Wang ◽  
Jin Wei ◽  
Song Yang ◽  
Jiacheng Lei ◽  
Mengyuan Hua ◽  
...  
Keyword(s):  
Schottky Type

Organic-Inorganic Junctions formed on Porous Silicon: Isolation of a Surface Configuration primary to the Luminescence Mechanism.

1992 ◽  
Vol 283 ◽  
Author(s):  
T. R. Cottrell ◽  
J. B. Benziger ◽  
J. C. Yee ◽  
J. K. M. Chunt ◽  
A. B. Bocarslyt
Keyword(s):  
Porous Silicon ◽  
Conducting Polymers ◽  
Ohmic Contacts ◽  
Primary Component ◽  
Solution Ph ◽  
Porous Silicon Surface ◽  
Surface Configuration ◽  
Schottky Type ◽  
P Type

ABSTRACTOrganic-inorganic junctions were formed between porous silicon and various conjugated conducting polymers, poly(3-methylthiophene) and polypyrrole. Schottky type barriers were observed between the conducting polymers in their doped state and p and n-type porous silicon. In their undoped state the conducting polymers behave like p-type semiconductors. Consistent with this, ohmic contacts were observed between undoped conducting polymers and p-type porous silicon while rectifying behavior typical of a p-n junction was observed for conducting polymers deposited onto n-type porous silicon. During characterization of the porous silicon substrate, an investigation of the surface chemistry revealed a strong correspondence between solution pH and the luminescence intensity of porous silicon. Surface titration experiments were performed on p and n-type porous silicon and the results indicate that a monoprotic surface acid with a pKa between 3–4 is a primary component in the luminescence mechanism of porous silicon.

Electrical Characterization of the Grain-Boundary Region of SnO2 Varistors

2006 ◽  
Vol 518 ◽  
pp. 235-240 ◽  
Author(s):  
M. Žunić ◽  
Z. Branković ◽  
G. Branković ◽  
D. Poleti
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Electric Fields ◽  
Electrical Characterization ◽  
Boundary Region ◽  
Current Voltage ◽  
Schottky Type ◽  
Boundary Properties ◽  
Current Voltage Characteristics

The effect of Co, Cr and Nb on the electrical properties of the grain boundaries of SnO2-based varistors was investigated. The powders were prepared by the method of evaporation and decomposition of solutions and suspensions. Varistor samples were obtained by uniaxial pressing followed by sintering at 1300 °C for 1h. The electrical properties of the grain-boundary region, such as resistance (R) and capacitance (C), were determined using ac impedance spectroscopy in the 27-330 °C temperature interval. Activation energies for conduction (EA) were calculated from the Arrhenius equation. The non-linear coefficients (α) and the breakdown electric fields (Eb) of the samples were determined from the current-voltage characteristics. The potential barrier height (Φb) was calculated using the Schottky-type conducting model. After a comparison of the characteristic parameters for different varistor compositions it was found that the Cr/Nb ratio has a crucial influence on the grain-boundary properties in SnO2 varistors.

Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector

2001 ◽  
Vol 693 ◽  
Author(s):  
Atsushi Motogaito ◽  
Keiichi Ohta ◽  
Kazumasa Hiramatsu ◽  
Youichiro Ohuchi ◽  
Kazuyuki Tadatomo ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Schottky Barrier ◽  
Penetration Depth ◽  
Transparent Electrode ◽  
Electrode Structure ◽  
Uv Detectors ◽  
High Responsivity ◽  
Schottky Type

AbstractCharacterization of Schottky barrier UV detectors with a comb-shaped electrode and a transparent electrode for VUV region using synchrotron radiation was carried out. These Schottky type detectors are effective to operate in UV and VUV light (50<l >360 nm). In particular, the latter realizes high responsivity (0.01 A/W for VUV light) and no photoemission of Au and GaN. The penetration depth for VUV light was estimated to 0.01 m. So the VUV light was absorbed in near the surface of i-GaN layer or the interface of Au and i-GaN layer.

Characterization of Dynamic Threshold Voltage in Schottky-Type p-GaN Gate HEMT Under High-Frequency Switching

2021 ◽  
Vol 42 (4) ◽  
pp. 501-504
Author(s):  
Kailun Zhong ◽  
Han Xu ◽  
Zheyang Zheng ◽  
Junting Chen ◽  
Kevin J. Chen
Keyword(s):  
Threshold Voltage ◽  
High Frequency ◽  
Dynamic Threshold ◽  
Schottky Type

Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs

2021 ◽  
Vol 118 (16) ◽  
pp. 163502
Author(s):  
Yan Cheng ◽  
Yuru Wang ◽  
Sirui Feng ◽  
Zheyang Zheng ◽  
Tao Chen ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Schottky Type ◽  
State Breakdown

Characterization of GaON as a surface reinforcement layer of p-GaN in Schottky-type p-GaN gate HEMTs

2021 ◽  
Vol 119 (5) ◽  
pp. 053503
Author(s):  
Li Zhang ◽  
Zheyang Zheng ◽  
Song Yang ◽  
Wenjie Song ◽  
Sirui Feng ◽  
...  
Keyword(s):  
Schottky Type ◽  
Surface Reinforcement

Morphological Characterization of Mycobacteriophage R1

1974 ◽  
Vol 32 ◽  
pp. 254-255
Author(s):  
B. L. Soloff ◽  
T. A. Rado
Keyword(s):  
Carbon Source ◽  
Stationary Phase ◽  
Growth Phase ◽  
Minimal Medium ◽  
Morphological Characterization ◽  
Logarithmic Growth Phase ◽  
Complete Lysis ◽  
Lysogenic Culture ◽  
Logarithmic Growth

Mycobacteriophage R1 was originally isolated from a lysogenic culture of M. butyricum. The virus was propagated on a leucine-requiring derivative of M. smegmatis, 607 leu−, isolated by nitrosoguanidine mutagenesis of typestrain ATCC 607. Growth was accomplished in a minimal medium containing glycerol and glucose as carbon source and enriched by the addition of 80 μg/ ml L-leucine. Bacteria in early logarithmic growth phase were infected with virus at a multiplicity of 5, and incubated with aeration for 8 hours. The partially lysed suspension was diluted 1:10 in growth medium and incubated for a further 8 hours. This permitted stationary phase cells to re-enter logarithmic growth and resulted in complete lysis of the culture.

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