Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's
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IPMs solving major reliability issues in automotive applications [intelligent power module

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/wct.2004.239810 ◽

2004 ◽

Author(s):

Hussein ◽

Majurndar ◽

Yoshida ◽

Maekawa

Keyword(s):

Automotive Applications ◽

Power Module ◽

Intelligent Power Module

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Session Contents

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/wct.2004.240280 ◽

2004 ◽

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A new monolithic power actuator devoted to high voltage and high frequency applications [emitter-switched bipolar transistor

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/wct.2004.240353 ◽

2004 ◽

Author(s):

Musumeci ◽

Pagano ◽

Raciti

Keyword(s):

High Voltage ◽

High Frequency ◽

Bipolar Transistor

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Recent progress in SiC bipolar junction transistors

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/wct.2004.240154 ◽

2004 ◽

Author(s):

Agarwa ◽

Sei-Hyung Ryu ◽

Richmond ◽

Capell ◽

Palmour ◽

...

Keyword(s):

Recent Progress ◽

Bipolar Junction Transistors

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Class D digital power amp (PurePath Digital/spl trade/) high Q musical content

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/wct.2004.239812 ◽

2004 ◽

Author(s):

Neesgaard ◽

Antley ◽

Efland ◽

Kaya ◽

Mochizuki ◽

...

Keyword(s):

High Q ◽

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Advanced HiGT with low-injection punch-through (LiPT) structure [high-conductivity IGBT

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/wct.2004.239837 ◽

2004 ◽

Author(s):

Oyama ◽

Arai ◽

Saitou ◽

Masuda ◽

Mori

Keyword(s):

High Conductivity

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A multi trench analog+logic protection (M-TRAP) for substrate crosstalk prevention in a 0.25 /spl mu/m smart power platform with 100V high-side capability

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/wct.2004.240347 ◽

2004 ◽

Author(s):

Parthasarathy ◽

Khemka ◽

Zhu ◽

Puchades ◽

Roggenbauer ◽

...

Keyword(s):

Smart Power ◽

High Side ◽

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New 3300V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/wct.2004.239836 ◽

2004 ◽

Author(s):

Pfaffenlehner ◽

Biermann ◽

Schaeffer ◽

Schulze

Keyword(s):

Switching Behavior ◽

Smooth Switching

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Mixed mode 3D pseudo-1chip ESD surge simulation using hydrodynamic model for new LDMOS cell layout realizing super high ESD endurance over 25kV/mm2

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/wct.2004.239745 ◽

2004 ◽

Author(s):

Kohno ◽

Takahashi ◽

Himi ◽

Higuchi

Keyword(s):

Hydrodynamic Model ◽

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A double channel normally-off SiC JFET device with ultra-low on-state resistance

Proceedings of the 16th International Symposium on Power Semiconductor Devices & IC's ◽

10.1109/wct.2004.240034 ◽

2004 ◽

Author(s):

Udrea ◽

Mihaila ◽

Rashid ◽

Amaratunga ◽

Takeuchi ◽

...

Keyword(s):

State Resistance ◽

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