2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)

2019 ◽

Author(s):

Lei Shu ◽

Yuan-Fu Zhao ◽

Liang Wang ◽

Tian-Qi Wang ◽

Xin Zhou ◽

...

Keyword(s):

Total Dose ◽

Electrical Characteristics ◽

Dose Irradiation

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The Time-dependent latch-up defect induced by single-particles in bulk CMOS

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) ◽

10.1109/icreed49760.2019.9205171 ◽

2019 ◽

Author(s):

YIN Wanjun ◽

LIU Yukui ◽

ZHU Yukai ◽

WU Xue

Keyword(s):

Time Dependent ◽

Single Particles ◽

Latch Up

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A Radiation-hardened Bus Controller Chip for ARINC 659

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) ◽

10.1109/icreed49760.2019.9205170 ◽

2019 ◽

Author(s):

Shuang Jiang ◽

Shibin Liu ◽

Chenguang Guo ◽

Teng Ma ◽

Alessandro Paccagnella ◽

...

Keyword(s):

Radiation Hardened

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Modeling and Analysis of Total-Ionization-Dose Induced Spatial Equivalent Noise Charge of a 180-nm 4T CMOS Active Pixel Sensor

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) ◽

10.1109/icreed49760.2019.9205164 ◽

2019 ◽

Author(s):

Y. Tang ◽

M. Wu ◽

Y. Liu ◽

W. Gao

Keyword(s):

Active Pixel Sensor ◽

Modeling And Analysis ◽

Total Ionization ◽

Active Pixel

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Feasibility Analysis of Establishing a Physical Model of Radiation Effects from SiC to device

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) ◽

10.1109/icreed49760.2019.9205162 ◽

2019 ◽

Author(s):

Xiuyu Zhang ◽

Yifan Zhang ◽

Yuan Gao ◽

Jianming Xue

Keyword(s):

Physical Model ◽

Radiation Effects ◽

Feasibility Analysis

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Total Dose Radiation Response of Substrate Hot Carrier for Uniaxial Strained Si Nano-Scale NMOSFET

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) ◽

10.1109/icreed49760.2019.9205168 ◽

2019 ◽

Author(s):

Minru Hao ◽

Chenguang Liao ◽

Haiwei Fu ◽

Guoxiang Chen

Keyword(s):

Total Dose ◽

Radiation Response ◽

Strained Si ◽

Hot Carrier ◽

Nano Scale ◽

Dose Radiation

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Study the performance of star sensor influenced by space radiation damage of image sensor

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) ◽

10.1109/icreed49760.2019.9205161 ◽

2019 ◽

Author(s):

Jie Feng ◽

Lin Wen ◽

Yu-Dong Li ◽

Cheng-Fa He ◽

Qi Guo

Keyword(s):

Radiation Damage ◽

Space Radiation ◽

Image Sensor ◽

Star Sensor

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Compton Scattering Pinhole Imaging Technology for Measuring and Diagnosing Dose Field Intensity Distribution of Intense Pulse Gamma Ray Beams

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) ◽

10.1109/icreed49760.2019.9205167 ◽

2019 ◽

Author(s):

Zheng Xiaohai ◽

Hu Huasi ◽

Sun Jianfeng ◽

Li Zhongliang ◽

Cai Dan ◽

...

Keyword(s):

Compton Scattering ◽

Field Intensity ◽

Intensity Distribution ◽

Gamma Ray ◽

Imaging Technology ◽

Dose Field ◽

Pinhole Imaging ◽

Field Intensity Distribution

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Experimental Study on Single Event Latch-up of a D/A Converter

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) ◽

10.1109/icreed49760.2019.9205160 ◽

2019 ◽

Author(s):

He Lv ◽

Hongwei Zhang ◽

Yong Li ◽

Xiaoliang Li ◽

Pengwei Li ◽

...

Keyword(s):

Experimental Study ◽

Single Event ◽

Latch Up

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Investigating Neutron-Induced Single Event Transient Characteristics by TCAD Simulations in 65 nm Technology and Below

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED) ◽

10.1109/icreed49760.2019.9205173 ◽

2019 ◽

Author(s):

Chao Peng ◽

Zhifeng Lei ◽

Zhangang Zhang ◽

Yunfei En ◽

Yun Huang

Keyword(s):

Single Event ◽

Single Event Transient ◽

Transient Characteristics ◽

Tcad Simulations

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2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation

The Time-dependent latch-up defect induced by single-particles in bulk CMOS

A Radiation-hardened Bus Controller Chip for ARINC 659

Modeling and Analysis of Total-Ionization-Dose Induced Spatial Equivalent Noise Charge of a 180-nm 4T CMOS Active Pixel Sensor

Feasibility Analysis of Establishing a Physical Model of Radiation Effects from SiC to device

Total Dose Radiation Response of Substrate Hot Carrier for Uniaxial Strained Si Nano-Scale NMOSFET

Study the performance of star sensor influenced by space radiation damage of image sensor

Compton Scattering Pinhole Imaging Technology for Measuring and Diagnosing Dose Field Intensity Distribution of Intense Pulse Gamma Ray Beams

Experimental Study on Single Event Latch-up of a D/A Converter

Investigating Neutron-Induced Single Event Transient Characteristics by TCAD Simulations in 65 nm Technology and Below

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2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Electrical Characteristics of 400V Ultra-Thin SOI NLDMOS after Total Dose Irradiation

The Time-dependent latch-up defect induced by single-particles in bulk CMOS

A Radiation-hardened Bus Controller Chip for ARINC 659

Modeling and Analysis of Total-Ionization-Dose Induced Spatial Equivalent Noise Charge of a 180-nm 4T CMOS Active Pixel Sensor

Feasibility Analysis of Establishing a Physical Model of Radiation Effects from SiC to device

Total Dose Radiation Response of Substrate Hot Carrier for Uniaxial Strained Si Nano-Scale NMOSFET

Study the performance of star sensor influenced by space radiation damage of image sensor

Compton Scattering Pinhole Imaging Technology for Measuring and Diagnosing Dose Field Intensity Distribution of Intense Pulse Gamma Ray Beams

Experimental Study on Single Event Latch-up of a D/A Converter

Investigating Neutron-Induced Single Event Transient Characteristics by TCAD Simulations in 65 nm Technology and Below

2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)
Latest Publications