2016 16th International Workshop on Junction Technology (IWJT)
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781467399630, 9781467399654

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Ohmic contacts for AlGaN/GaN HEMTs with artificially introduced uneven structures at metal/AlGaN interfaces

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486663 ◽

2016 ◽

Author(s):

Kazuo Tsutsui

Keyword(s):

Ohmic Contacts ◽

Gan Hemts

Download Full-text

Challenges of 2-D (3-D) device doping process and doping profiling metrology

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486680 ◽

2016 ◽

Cited By ~ 1

Author(s):

Shu Qin

Download Full-text

Metal/Insulator/Semiconductor contacts for ultimately scaled CMOS nodes: Projected benefits and remaining challenges

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486664 ◽

2016 ◽

Cited By ~ 1

Author(s):

Julien Borrel ◽

Louis Hutin ◽

Helen Grampeix ◽

Emmanuel Nolot ◽

Magali Tessaire ◽

...

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Contacts ◽

Scaled Cmos

Download Full-text

Foreword

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486658 ◽

2016 ◽

Author(s):

Yu-Long Jiang ◽

Kazuya Ohuchi ◽

Shu Qin

Download Full-text

Ultra shallow junction (USJ) formation using plasma assisted doping on 3D devices structures

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486670 ◽

2016 ◽

Cited By ~ 1

Author(s):

YS Kim ◽

YounGi Hong ◽

Ivan Berry

Keyword(s):

Shallow Junction

Download Full-text

10 nm-deep n+/p and p+/n Ge junctions with high activation formed by ion implantation and Flash Lamp Annealing (FLA)

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486678 ◽

2016 ◽

Cited By ~ 4

Author(s):

H. Tanimura ◽

H. Kawarazaki ◽

K. Fuse ◽

M. Abe ◽

T. Yamada ◽

...

Keyword(s):

Ion Implantation ◽

Flash Lamp ◽

High Activation

Download Full-text

Sponsorship

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486659 ◽

2016 ◽

Download Full-text

FinFET doping with PSG/BSG glass mimic doping by ultra low energy ion implantation

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486675 ◽

2016 ◽

Author(s):

Chuan He ◽

Lin Chen ◽

David Wei Zhang ◽

Junhua Hong ◽

Guangyao Jin ◽

...

Keyword(s):

Ion Implantation ◽

Low Energy

Download Full-text

Device performance improvement with implantation balancing energy contamination and productivity

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486672 ◽

2016 ◽

Author(s):

Yonggen He ◽

Guohui Cai ◽

Zuyuan Zhou ◽

Youfeng He ◽

Jingang Wu ◽

...

Keyword(s):

Performance Improvement ◽

Device Performance ◽

Balancing Energy

Download Full-text

2016 16th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2016.7486660 ◽

2016 ◽

Download Full-text

2016 16th International Workshop on Junction Technology (IWJT)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Ohmic contacts for AlGaN/GaN HEMTs with artificially introduced uneven structures at metal/AlGaN interfaces

Challenges of 2-D (3-D) device doping process and doping profiling metrology

Metal/Insulator/Semiconductor contacts for ultimately scaled CMOS nodes: Projected benefits and remaining challenges

Foreword

Ultra shallow junction (USJ) formation using plasma assisted doping on 3D devices structures

10 nm-deep n+/p and p+/n Ge junctions with high activation formed by ion implantation and Flash Lamp Annealing (FLA)

Sponsorship

FinFET doping with PSG/BSG glass mimic doping by ultra low energy ion implantation

Device performance improvement with implantation balancing energy contamination and productivity

Table of contents

Export Citation Format

2016 16th International Workshop on Junction Technology (IWJT)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Ohmic contacts for AlGaN/GaN HEMTs with artificially introduced uneven structures at metal/AlGaN interfaces

Challenges of 2-D (3-D) device doping process and doping profiling metrology

Metal/Insulator/Semiconductor contacts for ultimately scaled CMOS nodes: Projected benefits and remaining challenges

Foreword

Ultra shallow junction (USJ) formation using plasma assisted doping on 3D devices structures

10 nm-deep n+/p and p+/n Ge junctions with high activation formed by ion implantation and Flash Lamp Annealing (FLA)

Sponsorship

FinFET doping with PSG/BSG glass mimic doping by ultra low energy ion implantation

Device performance improvement with implantation balancing energy contamination and productivity

Table of contents

2016 16th International Workshop on Junction Technology (IWJT)
Latest Publications