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Ultra shallow junction (USJ) formation using plasma assisted doping on 3D devices structures
2016 16th International Workshop on Junction Technology (IWJT)
◽
10.1109/iwjt.2016.7486670
◽
2016
◽
Cited By ~ 1
Author(s):
YS Kim
◽
YounGi Hong
◽
Ivan Berry
Keyword(s):
Shallow Junction
Download Full-text
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References
Laser thermal processing for shallow junction and silicide formation
10.1117/12.323992
◽
1998
◽
Cited By ~ 10
Author(s):
Somit Talwar
◽
Gaurav Verma
◽
Kurt H. Weiner
◽
Carol Gelatos
Keyword(s):
Thermal Processing
◽
Silicide Formation
◽
Shallow Junction
◽
Laser Thermal Processing
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Nano-scale Depth Profiles of Electrical Properties of Phosphorus Doped Silicon for Ultra-Shallow Junction Evaluation
IEEE Transactions on Semiconductor Manufacturing
◽
10.1109/tsm.2021.3074644
◽
2021
◽
pp. 1-1
Author(s):
Hung-Yuan Chang
◽
Yew-Chung Sermon Wu
◽
Chia-He Chang
◽
Kun-Lin Lin
◽
Abhijeet Joshi
◽
...
Keyword(s):
Electrical Properties
◽
Shallow Junction
◽
Depth Profiles
◽
Nano Scale
◽
Doped Silicon
◽
Phosphorus Doped
Download Full-text
Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation
Journal of Applied Physics
◽
10.1063/1.1756685
◽
2004
◽
Vol 96
(1)
◽
pp. 919-921
◽
Cited By ~ 3
Author(s):
Lin Shao
◽
John Chen
◽
Jianming Zhang
◽
D. Tang
◽
Sanjay Patel
◽
...
Keyword(s):
Point Defect
◽
Ion Beams
◽
Defect Engineering
◽
Shallow Junction
◽
Junction Formation
Download Full-text
Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film
Electronics Letters
◽
10.1049/el:19981653
◽
1998
◽
Vol 34
(25)
◽
pp. 2436
Author(s):
T. Oishi
◽
A. Furukawa
◽
K. Shiozawa
◽
Y. Abe
◽
Y. Tokuda
Keyword(s):
Oxide Film
◽
Ion Implantation
◽
High Performance
◽
Shallow Junction
◽
Thin Oxide Film
◽
Junction Formation
◽
Thin Oxide
◽
Length Reduction
Download Full-text
New CMOS shallow junction well FET structure (CMOS-SJET) for low power-supply voltage
International Technical Digest on Electron Devices Meeting
◽
10.1109/iedm.1992.307504
◽
1992
◽
Cited By ~ 11
Author(s):
Yoshimura
◽
Matsuoka
◽
Kakumu
Keyword(s):
Low Power
◽
Power Supply
◽
Supply Voltage
◽
Power Supply Voltage
◽
Shallow Junction
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Shallow junction formation by preamorphization with tin implantation
Applied Physics Letters
◽
10.1063/1.97045
◽
1986
◽
Vol 49
(10)
◽
pp. 575-577
◽
Cited By ~ 29
Author(s):
M. Delfino
◽
D. K. Sadana
◽
A. E. Morgan
Keyword(s):
Shallow Junction
◽
Junction Formation
Download Full-text
Surface Emission And Band-Bending In Shallow Junction GaAs LEDs As Affected By Type Of Gas And Pressure
10.1117/12.968177
◽
1987
◽
Author(s):
S. Hava
Keyword(s):
Band Bending
◽
Shallow Junction
◽
Surface Emission
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Beyond TED: understanding boron shallow junction formation
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217)
◽
10.1109/iedm.1998.746407
◽
2002
◽
Cited By ~ 3
Author(s):
S.T. Dunham
◽
S. Chakravarthi
◽
A.H. Gencer
Keyword(s):
Shallow Junction
◽
Junction Formation
Download Full-text
A defect behavior in boron shallow junction formation of Si under low-temperature pre-anneal and non-melt-laser anneal
2010 International Workshop on Junction Technology Extended Abstracts
◽
10.1109/iwjt.2010.5474994
◽
2010
◽
Author(s):
Suhei Hara
◽
Yusuke Shigenaga
◽
Satoru Matsumoto
◽
Genshu Fuse
◽
Susumu Sakuragi
Keyword(s):
Low Temperature
◽
Shallow Junction
◽
Junction Formation
◽
Laser Anneal
◽
Defect Behavior
Download Full-text
Effects of low-temperature postannealing on a n+-p shallow junction fabricated by plasma doping
Applied Physics Letters
◽
10.1063/1.1923758
◽
2005
◽
Vol 86
(19)
◽
pp. 193503
◽
Cited By ~ 1
Author(s):
Sungkweon Baek
◽
Hyunsang Hwang
◽
Kiju Im
◽
Chang-Geun Ahn
◽
Jong-Heon Yang
◽
...
Keyword(s):
Low Temperature
◽
Shallow Junction
◽
Plasma Doping
Download Full-text
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