1992 Symposium on VLSI Technology Digest of Technical Papers
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Published By IEEE

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Single-poly bipolar transistor with selective epitaxial silicon and chemo-mechanical polishing

1992 Symposium on VLSI Technology Digest of Technical Papers ◽

10.1109/vlsit.1992.200645 ◽

2003 ◽

Cited By ~ 2

Author(s):

C.T. Nguyen ◽

S.C. Kuehne ◽

S.S. Wong

Keyword(s):

Bipolar Transistor ◽

Mechanical Polishing ◽

Epitaxial Silicon

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Ultra-thin silicon dioxide leakage current and scaling limit

1992 Symposium on VLSI Technology Digest of Technical Papers ◽

10.1109/vlsit.1992.200622 ◽

2003 ◽

Cited By ~ 67

Author(s):

K.F. Schuegraf ◽

C.C. King ◽

C. Hu

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Scaling Limit ◽

Thin Silicon

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A native-oxide-free process for 4 nm capacitor dielectrics

1992 Symposium on VLSI Technology Digest of Technical Papers ◽

10.1109/vlsit.1992.200621 ◽

2003 ◽

Cited By ~ 3

Author(s):

M. Nakano ◽

N. Shinmura ◽

K. Iguchi ◽

T. Watanabe ◽

K. Sakiyama

Keyword(s):

Native Oxide ◽

Free Process

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Influence of stress-induced void formation on electromigration endurance in quarter-micron aluminum interconnects

1992 Symposium on VLSI Technology Digest of Technical Papers ◽

10.1109/vlsit.1992.200652 ◽

2003 ◽

Cited By ~ 3

Author(s):

N. Matsunaga ◽

H. Shibata ◽

K. Hashimoto

Keyword(s):

Void Formation ◽

Aluminum Interconnects

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A 3.3 V operation nonvolatile memory cell technology

1992 Symposium on VLSI Technology Digest of Technical Papers ◽

10.1109/vlsit.1992.200636 ◽

2003 ◽

Cited By ~ 2

Author(s):

K. Yoshikawa ◽

E. Sakagami ◽

S. Mori ◽

N. Arai ◽

K. Narita ◽

...

Keyword(s):

Nonvolatile Memory ◽

Memory Cell ◽

Cell Technology

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Rapid thermal multiprocessing using multivariable control of circularly symmetric 3 zone lamp

1992 Symposium on VLSI Technology Digest of Technical Papers ◽

10.1109/vlsit.1992.200642 ◽

2003 ◽

Author(s):

P.P. Apte ◽

K.C. Saraswat

Keyword(s):

Multivariable Control

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Design considerations for sub-0.35 mu m buried channel P-MOSFET devices

1992 Symposium on VLSI Technology Digest of Technical Papers ◽

10.1109/vlsit.1992.200664 ◽

2003 ◽

Cited By ~ 1

Author(s):

A. Mazure ◽

R. Subrahmanyan ◽

C. Gunderson ◽

M. Orlowski

Keyword(s):

Design Considerations ◽

Buried Channel

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High drivability and high reliability MOSFETs with non-doped poly-Si spacer LDD structure (SLDD)

1992 Symposium on VLSI Technology Digest of Technical Papers ◽

10.1109/vlsit.1992.200663 ◽

2003 ◽

Cited By ~ 3

Author(s):

A. Shimizu ◽

N. Ohki ◽

H. Ishida ◽

T. Yamanaka ◽

N. Hashimoto ◽

...

Keyword(s):

High Reliability

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A novel cell structure for giga-bit EPROMs and flash memories using polysilicon thin film transistors

1992 Symposium on VLSI Technology Digest of Technical Papers ◽

10.1109/vlsit.1992.200638 ◽

2003 ◽

Cited By ~ 12

Author(s):

S. Koyama

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Cell Structure ◽

Flash Memories

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Conductive channel in ONO formed by controlled dielectric breakdown

1992 Symposium on VLSI Technology Digest of Technical Papers ◽

10.1109/vlsit.1992.200623 ◽

2003 ◽

Cited By ~ 11

Author(s):

S. Chiang ◽

R. Wang ◽

T. Speers ◽

J. McCollum ◽

E. Hamdy ◽

...

Keyword(s):

Dielectric Breakdown ◽

Conductive Channel

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1992 Symposium on VLSI Technology Digest of Technical PapersLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Single-poly bipolar transistor with selective epitaxial silicon and chemo-mechanical polishing

Ultra-thin silicon dioxide leakage current and scaling limit

A native-oxide-free process for 4 nm capacitor dielectrics

Influence of stress-induced void formation on electromigration endurance in quarter-micron aluminum interconnects

A 3.3 V operation nonvolatile memory cell technology

Rapid thermal multiprocessing using multivariable control of circularly symmetric 3 zone lamp

Design considerations for sub-0.35 mu m buried channel P-MOSFET devices

High drivability and high reliability MOSFETs with non-doped poly-Si spacer LDD structure (SLDD)

A novel cell structure for giga-bit EPROMs and flash memories using polysilicon thin film transistors

Conductive channel in ONO formed by controlled dielectric breakdown

1992 Symposium on VLSI Technology Digest of Technical Papers
Latest Publications