2013 5th IEEE International Memory Workshop
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9781467361699, 9781467361682
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Simulation of polarity independent RESET in electrochemical metallization memory cells

2013 ◽  
Author(s):  
S. Menzel ◽  
I. Valov ◽  
R. Waser ◽  
N. Adler ◽  
J. van den Hurk ◽  
...  
Keyword(s):  
Memory Cells

Analysis of vertical cross-point resistive memory (VRRAM) for 3D RRAM design

2013 ◽  
Author(s):  
Leqi Zhang ◽  
Stefan Cosemans ◽  
Dirk J. Wouters ◽  
Bogdan Govoreanu ◽  
Guido Groeseneken ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Cross Point

A scalable, low voltage, low cost SONOS memory technology for embedded NVM applications

2013 ◽  
Author(s):  
K. Ramkumar ◽  
I. Kouznetsov ◽  
V. Prabhakar ◽  
K. Shakeri ◽  
X. Yu ◽  
...  
Keyword(s):  
Low Voltage ◽  
Low Cost

Notice of Removal: Fabrication and validation of A2RAM memory cells on SOI and bulk substrates - Withdrawn

2013 ◽  
Author(s):  
N. Rodriguez ◽  
F. Gamiz ◽  
C. Marquez ◽  
C. Navarro ◽  
F. Andrieu ◽  
...  
Keyword(s):  
Memory Cells

Channel Coupling phenomenon as scaling barrier of NAND flash memory beyond 20nm node

2013 ◽  
Author(s):  
ChangHyun Lee ◽  
Jiyeong Hwang ◽  
Albert Fayrushin ◽  
Hyunjung Kim ◽  
Byoungkeun Son ◽  
...  
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Channel Coupling
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