2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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9784863486119, 9784863486102

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Simulation of micro-mirrors for optical MEMS

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085269 ◽

2017 ◽

Cited By ~ 1

Author(s):

M. Zanuccoli ◽

C. Fiegna ◽

E. Cianci ◽

C. Wiemer ◽

A. Lamperti ◽

...

Keyword(s):

Optical Mems

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Analysis of screening effects in multiple-gate and gate-all-around Si NW array FETs

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085294 ◽

2017 ◽

Author(s):

Ghader Darbandy ◽

Sven Mothes ◽

Michael SchrOter ◽

Martin Claus

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Stacked nanowires/nanosheets GAA MOSFET from technology to design enablement

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085250 ◽

2017 ◽

Cited By ~ 3

Author(s):

J.-Ch. Barbe ◽

S. Barraud ◽

O. Rozeau ◽

S. Martinia ◽

J. Lacord ◽

...

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Advanced non-quasi-static(NQS) compact model for characterization of non-resonant plasmonic terahertz detector

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085323 ◽

2017 ◽

Author(s):

Sang Hyo Ahn ◽

Min Woo Ryu ◽

Esan Jang ◽

Hyeong Ju Jeon ◽

Kyung Rok Kim

Keyword(s):

Compact Model ◽

Terahertz Detector

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Timing and power fluctuations on gate-all-around nanowire CMOS circuit induced by various sources of random discrete dopants

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085264 ◽

2017 ◽

Cited By ~ 1

Author(s):

Wen-Li Sung ◽

Pei-Jung Chao ◽

Yiming Li

Keyword(s):

Cmos Circuit ◽

Power Fluctuations ◽

Random Discrete Dopants

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Modeling of the effective field dependent mobility for TCAD simulation of DRAM cell transistors considering the random discrete dopants

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085309 ◽

2017 ◽

Cited By ~ 1

Author(s):

Daewon Kim ◽

Hoin Yu ◽

Seungman Rhee ◽

Young June Park

Keyword(s):

Effective Field ◽

Field Dependent ◽

Tcad Simulation ◽

Random Discrete Dopants

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The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085317 ◽

2017 ◽

Cited By ~ 1

Author(s):

A. Schenk ◽

S. Sant ◽

K. Moselund ◽

H. Riel ◽

E. Memisevic ◽

...

Keyword(s):

Interface Traps ◽

Oxide Interface ◽

Tunnel Fets ◽

The Impact

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Analytical model of energy level alignment at metal-organic interface facilitating hole injection

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085305 ◽

2017 ◽

Cited By ~ 1

Author(s):

Xuewen Shi ◽

Guangwei Xu ◽

Xinlv Duan ◽

Nianduan Lu ◽

Jiezhi Chen ◽

...

Keyword(s):

Energy Level ◽

Analytical Model ◽

Hole Injection ◽

Energy Level Alignment ◽

Metal Organic

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Fast evaluation of continuous-RX impact on performance for strained FDSOI

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085339 ◽

2017 ◽

Author(s):

J. Lacord ◽

M.-A. Jaud ◽

T. Poiroux ◽

J.-Ch. Barbe

Keyword(s):

Fast Evaluation

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Performance evaluation of ferroelectric MOSFETs based on Gibbs free energy

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.23919/sispad.2017.8085303 ◽

2017 ◽

Cited By ~ 1

Author(s):

Xiaoyi Zhang ◽

Gengchiau Liang

Keyword(s):

Free Energy ◽

Performance Evaluation ◽

Gibbs Free Energy

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2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Simulation of micro-mirrors for optical MEMS

Analysis of screening effects in multiple-gate and gate-all-around Si NW array FETs

Stacked nanowires/nanosheets GAA MOSFET from technology to design enablement

Advanced non-quasi-static(NQS) compact model for characterization of non-resonant plasmonic terahertz detector

Timing and power fluctuations on gate-all-around nanowire CMOS circuit induced by various sources of random discrete dopants

Modeling of the effective field dependent mobility for TCAD simulation of DRAM cell transistors considering the random discrete dopants

The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs

Analytical model of energy level alignment at metal-organic interface facilitating hole injection

Fast evaluation of continuous-RX impact on performance for strained FDSOI

Performance evaluation of ferroelectric MOSFETs based on Gibbs free energy

2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
Latest Publications