Cause analysis of width-dependence of on-current variability in thin gate-all-around silicon nanowire MOSFET

In this study, the width dependence of on-current variability in extremely narrow gate-all-around (GAA) silicon nanowire MOSFET down to 2nm width is analyzed by variability decomposition into components as well as analyzing the Pelgrom plot. It is found that the current variability rapidly increases below 4nm mainly due to quantum-effect-induced threshold voltage variability and silicon-thickness-fluctuation-induced mobility fluctuation (μfluctuation). The current variability becomes even worse in 2nm, which is fundamentally caused by line width roughness.

Suppressed Distortion Performance Metrics of 20nm GAA-GaN/Al2O3 Nanowire MOSFET: Based on Quantum Numerical Simulation

This work investigates the suppressed distortion performance metrics of gate all around (GAA) Gallium Nitride (GaN)/Al2O3 Nanowire (NW) n-channel MOSFET (GaNNW/Al2O3 MOSFET) based on quantum numerical simulations at room temperature (300 K). The simulation results show high switching ratio (≈109) with low subthreshold swing (67mV/decade), high QF value (4.1mS-decade/mV) of GaNNW/Al2O3-MOSFET in comparison to GaNNW/SiO2 and SiNW MOSFET for Vds=0.4V due to the lower permittivity of GaN and more effective mass of the electron. Furthermore, linearity and distortion performance is also examined by numerically calculating transconductance and its higher derivatives (gm2 and gm3); voltage and current intercept point (VIP2, VIP3 and IIP3); 1-dB compression point; Harmonics distortions (HD2 and HD3) and IMD3. All these parameters show high linearity and low distortion at zero crossover point (where gm3=0) in GaNNW/Al2O3 MOSFET. Thus, GaNNW MOSFET can be considered as a promising candidate for low power high-performance applications. In addition, effect of ambient temperature (250K-450K) on the performance of GaNNW/Al2O3 is studied and discussed in terms of the above mentioned metrics. It is very well exhibited that SS, Ion, Vth, and QF improved when the temperature is lowered which makes it suitable for low-temperature environments. But, linearity degrades as the temperature lowers down.

In1-xGaxAs Double Metal Gate-Stacking Cylindrical Nanowire MOSFET for highly sensitive Photo detector

This paper proposed a highly sensitive Double Metal Gate-stacking Cylindrical Nanowire-MOSFET (DMG CL-NWMOSFET) photosensor by using In1 − xGaxAs. For the best control of short channel effects (SCEs), a double metal gate has been utilized and for efficient photonic absorption, III-V compound has been utilized as channel material. The currently available Conventional Filed-Effect-Transistors (CFET) based photosensor have been used threshold voltage as parameter for the calculation of sensitivity, but in the proposed photosensor, change in subthreshold current has been used as the detecting parameters for sensitivity (Iillumination/Idark). The scientifically electrons study and the photo-conductive characteristics of In1 − xGaxAs CL-NWMOSFET are taken through Silvaco Atlas Tools. After the analysis of In1 − xGaxAs dual Metal Gate Stacking Cylindrical NWMOSFET responds to detectable spectrum (~ 450 nm), incidents light with constant, reversible and fast response by responsivity (4.3 mAW− 1), high Iillumination/Idark (1.36 * 109) and quantum-efficiency (1.12 %). The obtained results of In1 − xGaxAs DMG CL-NWMOSFET based photodetectors have the potential in optoelectronics applications.