Two-dimensional carrier mapping at the nanometer-scale on 32nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy

2011 ◽  
Author(s):  
Pierre Eyben ◽  
Trudo Clarysse ◽  
Jay Mody ◽  
Aftab Nazir ◽  
Andreas Schulze ◽  
...  
Keyword(s):  
High Vacuum ◽  
Nanometer Scale ◽  
Two Dimensional ◽  
Spreading Resistance

Two-dimensional carrier mapping at the nanometer-scale on 32nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy

2012 ◽  
Vol 71 ◽  
pp. 69-73 ◽  
Author(s):  
Pierre Eyben ◽  
Trudo Clarysse ◽  
Jay Mody ◽  
Aftab Nazir ◽  
Andreas Schulze ◽  
...  
Keyword(s):  
High Vacuum ◽  
Nanometer Scale ◽  
Two Dimensional ◽  
Spreading Resistance

Quantitative Two-Dimensional Carrier Mapping in Silicon Nanowire-Based Tunnel-Field Effect Transistors Using Scanning Spreading Resistance Microscopy

2010 ◽  
Vol 1258 ◽  
Author(s):  
Andreas Schulze ◽  
Thomas Hantschel ◽  
Pierre Eyben ◽  
Anne Vandooren ◽  
Rita Rooyackers ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
High Vacuum ◽  
Calibration Procedure ◽  
Successful Implementation ◽  
Two Dimensional ◽  
Carrier Distribution ◽  
Spreading Resistance ◽  
Fully Integrated

AbstractThe successful implementation of silicon nanowire (NW)-based tunnel-field effect transistors (TFET) critically depends on gaining a clear insight into the quantitative carrier distribution inside such devices. Therefore, we have developed a method based on scanning spreading resistance microscopy (SSRM) which allows quantitative two-dimensional (2D) carrier profiling of fully integrated NW-based TFETs with 2 nm spatial resolution. The keys in our process are optimized NW cleaving and polishing steps, in-house fabricated diamond tips with ultra-high resolution, measurements in high-vacuum and a dedicated calibration procedure accounting for dopant dependant carrier mobilities.

Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors

2008 ◽  
Vol 48 (8-9) ◽  
pp. 1521-1524 ◽  
Author(s):  
W. Polspoel ◽  
W. Vandervorst ◽  
L. Aguilera ◽  
M. Porti ◽  
M. Nafria ◽  
...  
Keyword(s):  
High Vacuum ◽  
Nanometer Scale ◽  
High K

Precise control of dry etching for nanometer scale air-hole arrays in two-dimensional GaAs/AlGaAs photonic crystal slabs

2007 ◽  
Vol 275 (1) ◽  
pp. 257-267 ◽  
Author(s):  
Naoki Ikeda ◽  
Yoshimasa Sugimoto ◽  
Yoshinori Watanabe ◽  
Nobuhiko Ozaki ◽  
Yoshiaki Takata ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Dry Etching ◽  
Nanometer Scale ◽  
Two Dimensional ◽  
Precise Control ◽  
Photonic Crystal Slabs ◽  
Hole Arrays ◽  
Air Hole

High Mobility Two-Dimensional Electron Gas in Modulation-Doped Si/SiGe Heterostructures

1991 ◽  
Vol 220 ◽  
Author(s):  
P. J. Wang ◽  
B. S. Meyerson ◽  
K. Ismail ◽  
F. F. Fang ◽  
J. Nocera
Keyword(s):  
High Vacuum ◽  
Electron Gas ◽  
Ultra High Vacuum ◽  
Threading Dislocation ◽  
High Electron ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Vapor Deposition Technique ◽  
Dimensional Electron Gas

ABSTRACTWe report record-high electron mobilities obtained in the Si/SiGe alloy system via single-junction n-type modulation-doped Si/Si0.7Ge0.9 heterostructurcs grown by the ultra-high vacuum chemical vapor deposition technique. Peak electron mobilities as high as 1,800 cm2/Vs, 9,000 cm2/Vs and 19,000 cm2/Vs were measured at room temperature, 77K and 1.4K, respectively. These high mobilities resulted from excellent Si/SiGe interfacial properties by employing a compositional graded Si/SiGe superlattice prior to the growth of a thick S0.7Ge0.3 buffer, which brought about a dramatic reduction of the threading dislocation density in the active Si channel. Two thin phosphorous-doped layers were incorporated in the SiGe barrier and at its surface to supply electrons to the Si channel and to suppress the surface depletion, respectively. The transport properties of these heterostructurcs were determined to be those of a two dimensional electron gas at Si/SiGe heterointerfaces at low temperatures.

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