Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting
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Sub-micron BiCMOS process design for manufacturing

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1992.274079 ◽

2003 ◽

Cited By ~ 5

Author(s):

C.K. Lau ◽

C.-H. Lin ◽

D.L. Packwood

Keyword(s):

Process Design ◽

Design For Manufacturing ◽

Bicmos Process

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Design and evaluation of a 5 GHz HBT strobed comparator

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1992.274064 ◽

2003 ◽

Cited By ~ 2

Author(s):

V.E. Garuts

Keyword(s):

5 Ghz

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Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high-speed (160 mW, 19 GHz)

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1992.274060 ◽

2003 ◽

Cited By ~ 15

Author(s):

A. Felder ◽

J. Hauenschild ◽

R. Mahnkopf ◽

H.-M. Rein

Keyword(s):

Power Consumption ◽

Low Power ◽

High Speed ◽

Frequency Divider ◽

Low Power Consumption

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Silicon epitaxial equipment and processing advances for bipolar base technology

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1992.274091 ◽

2003 ◽

Cited By ~ 2

Author(s):

J.O. Borland

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A comparative device and performance analysis between a Si-Ge epitaxial-base HBT and a Si double-poly I/I BJT npn structure

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1992.274085 ◽

2003 ◽

Cited By ~ 1

Author(s):

M.M. Pelella ◽

P.T. Nguyen ◽

M.J. Saccamango ◽

S. Ratanaphanyarat ◽

J.H. Comfort ◽

...

Keyword(s):

Performance Analysis ◽

And Performance

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Power partition and emitter size optimisation for bipolar ECL circuit

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1992.274058 ◽

2003 ◽

Author(s):

H.Y. Hsieh ◽

K. Chin ◽

C.T. Chuang

Keyword(s):

Ecl Circuit

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A complete and consistent electrical/thermal HBT model

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1992.274051 ◽

2003 ◽

Cited By ~ 20

Author(s):

C.C. McAndrew

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An 850 MHz current feedback operational amplifier

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1992.274080 ◽

2003 ◽

Cited By ~ 1

Author(s):

S.R. Jost

Keyword(s):

Operational Amplifier ◽

Current Feedback ◽

Current Feedback Operational Amplifier

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An ultra-shallow link base for a double polysilicon bipolar transistor

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1992.274075 ◽

2003 ◽

Cited By ~ 1

Author(s):

J.D. Hayden ◽

J.D. Burnett ◽

J.R. Pfiester ◽

M.P. Woo

Keyword(s):

Bipolar Transistor

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Circuit design for a 15-Gb/s Si bipolar decision circuit

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting ◽

10.1109/bipol.1992.274063 ◽

2003 ◽

Cited By ~ 3

Author(s):

K. Ishii ◽

H. Ichino ◽

Y. Kobayashi ◽

C. Yamaguchi

Keyword(s):

Circuit Design ◽

Decision Circuit

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Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology MeetingLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Sub-micron BiCMOS process design for manufacturing

Design and evaluation of a 5 GHz HBT strobed comparator

Static silicon frequency divider for low power consumption (4 mW, 10 GHz) and high-speed (160 mW, 19 GHz)

Silicon epitaxial equipment and processing advances for bipolar base technology

A comparative device and performance analysis between a Si-Ge epitaxial-base HBT and a Si double-poly I/I BJT npn structure

Power partition and emitter size optimisation for bipolar ECL circuit

A complete and consistent electrical/thermal HBT model

An 850 MHz current feedback operational amplifier

An ultra-shallow link base for a double polysilicon bipolar transistor

Circuit design for a 15-Gb/s Si bipolar decision circuit

Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting
Latest Publications