Incorporation of interstitial carbon during growth of heavily carbon-doped GaAs by movcd and mombe

ABSTRACTCarbon is a promising p-type dopant in GaAs/AlxGa1−xAs heterojunction bipolar transistors (HBT) because of its low atomic mobility and its potential for achieving very high carrier concentrations. It is generally believed that carbon incorporates substitutionally on the column V sublattice. However, an anomalous behavior at carrier concentrations > 5 × 1019 cm−3 is observed in the electrical properties of carbon doped layers. The strain sustained in these layers may be explained by the presence of interstitial carbon.We used Rutherford Backscattering Spectrometry in channeling geometry utilizing the nuclear reaction 12C (d,p)13C to determine the lattice locations of carbon in GaAs. The data presented unambiguously show, that up to 25% of the carbon atoms occupy interstitial sites. The presence of interstitial carbon is of importance for applications, since interstitial carbon may exhibit an enhanced diffusivity altering nominally abrupt dopant profiles.

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Preparation of interstitial carbon doped BiOI for enhanced performance in photocatalytic nitrogen fixation and methyl orange degradation

Journal of Colloid and Interface Science ◽

10.1016/j.jcis.2018.12.101 ◽

2019 ◽

Vol 539 ◽

pp. 563-574 ◽

Cited By ~ 80

Author(s):

Lin Zeng ◽

Feng Zhe ◽

Yan Wang ◽

Qingle Zhang ◽

Xinyue Zhao ◽

...

Keyword(s):

Nitrogen Fixation ◽

Methyl Orange ◽

Methyl Orange Degradation ◽

Interstitial Carbon ◽

Carbon Doped

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Multifunctional interstitial-carbon-doped FeCoNiCu high entropy alloys with excellent electromagnetic-wave absorption performance

Journal of Material Science and Technology ◽

10.1016/j.jmst.2021.09.025 ◽

2021 ◽

Author(s):

Jianping Yang ◽

Linwen Jiang ◽

Zhonghao Liu ◽

Zhuo Tang ◽

Anhua Wu

Keyword(s):

Electromagnetic Wave ◽

High Entropy Alloys ◽

Interstitial Carbon ◽

Electromagnetic Wave Absorption ◽

High Entropy ◽

Carbon Doped ◽

Wave Absorption ◽

Absorption Performance

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An atomic resolution study of a carbide phase in platinum

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100120503 ◽

1992 ◽

Vol 50 (1) ◽

pp. 20-21

Author(s):

M.J. Witcomb ◽

M.A. O'Keefe ◽

CJ. Echer ◽

C. Nelson ◽

J.H. Turner ◽

...

Keyword(s):

Solid Solution ◽

Carbon Atom ◽

Carbide Phase ◽

Structural Changes ◽

Critical Role ◽

Alloy System ◽

Atomic Resolution ◽

Excess Carbon ◽

Interstitial Carbon ◽

Resolution Study

Under normal circumstances, Pt dissolves only a very small amount of interstitial carbon in solid solution. Even so, an appropriate quench/age treatment leads to the formation of stable Pt2C {100} plate precipitates. Excess (quenched-in) vacancies play a critical role in the process by accommodating the volume and structural changes that accompany the transformation. This alloy system exhibits other interesting properties. Due to a large vacancy/carbon atom binding energy, Pt can absorb excess carbon at high temperatures in a carburizing atmosphere. In regions rich in carbon and vacancies, another carbide phase, Pt7C which undergoes an order-disorder reaction was formed. The present study of Pt carburized at 1160°C and aged at 515°C shows that other carbides in the PtxC series can be produced.

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