The growth of Ga0.52In0.48P and Al0.18Ga0.34In0.48P on lens-shaped GaAs substrates by metalorganic vapor phase epitaxy

Gallium Arsenide and Related Compounds 1991 ◽

10.1201/9781003069638-98 ◽

2020 ◽

pp. 529-576

Author(s):

N. Buchan ◽

W. Heuberger ◽

A. Jakubowicz ◽

P. Roentgen

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Gaas Substrates

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GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.l755 ◽

1993 ◽

Vol 32 (Part 2, No. 6A) ◽

pp. L755-L757 ◽

Author(s):

Xiong Zhang ◽

Koichi Karaki ◽

Hiroyuki Yaguchi ◽

Kentaro Onabe ◽

Yasuhiro Shiraki ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Gaas Substrates

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Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.4913 ◽

2003 ◽

Vol 42 (Part 1, No. 8) ◽

pp. 4913-4918 ◽

Author(s):

Chin-I Liao ◽

Kao-Feng Yarn ◽

Chien-Lien Lin ◽

Yu-Lu Lin ◽

Yeong-Her Wang

Keyword(s):

Low Temperature ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

High Quality ◽

Gaas Substrates ◽

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High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2012.01.160 ◽

2012 ◽

Vol 524 ◽

pp. 26-31 ◽

Author(s):

T. Mzoughi ◽

H. Fitouri ◽

I. Moussa ◽

A. Rebey ◽

B. El Jani

Keyword(s):

High Resolution ◽

Diffraction Study ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

X Ray Diffraction ◽

X Ray ◽

Gaas Substrates

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Metalorganic Vapor Phase Epitaxy of InAs Layers on GaAs Substrates Using Low-Temperature Growth of InGaAs Graded Buffer Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.l944 ◽

2004 ◽

Vol 43 (No. 7B) ◽

pp. L944-L946 ◽

Author(s):

Yasushi Takano ◽

Masayoshi Umezawa ◽

Sho Shirakata ◽

Shunro Fuke

Keyword(s):

Low Temperature ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Buffer Layers ◽

Temperature Growth ◽

Low Temperature Growth ◽

Gaas Substrates

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Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates

Microelectronics Journal ◽

10.1016/s0026-2692(98)00152-9 ◽

1999 ◽

Vol 30 (4-5) ◽

pp. 455-459 ◽

Author(s):

Soohaeng Cho ◽

A. Sanz-Hervás ◽

Jongseok Kim ◽

A. Majerfeld ◽

C. Villar ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Structures ◽

Gaas Substrates

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Low temperature growth of InGaAs layers on misoriented GaAs substrates by metalorganic vapor phase epitaxy

Applied Physics Letters ◽

10.1063/1.1463210 ◽

2002 ◽

Vol 80 (12) ◽

pp. 2054-2056 ◽

Author(s):

Y. Takano ◽

K. Kobayashi ◽

H. Iwahori ◽

N. Kuroyanagi ◽

K. Kuwahara ◽

...

Keyword(s):

Low Temperature ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Temperature Growth ◽

Low Temperature Growth ◽

Gaas Substrates

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Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.958 ◽

2004 ◽

Vol 43 (3) ◽

pp. 958-965 ◽

Author(s):

Mutsumi Sugiyama ◽

Taiki Nosaka ◽

Tomonori Suzuki ◽

Takashi Koida ◽

Kiyomi Nakajima ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Gaas Substrates ◽

Cubic Gan ◽

Defect Densities

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Surface morphology and optical properties of ZnTe epilayers on GaAs substrates by metalorganic vapor phase epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2008.09.118 ◽

2009 ◽

Vol 311 (3) ◽

pp. 970-973 ◽

Author(s):

Qixin Guo ◽

Yusuke Sueyasu ◽

Yaliu Ding ◽

Tooru Tanaka ◽

Mitsuhiro Nishio

Keyword(s):

Optical Properties ◽

Surface Morphology ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Gaas Substrates

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Metalorganic Vapor Phase Epitaxy Growth and Characterization of (AlxGa1-x)0.5In0.5P/Ga0.5In0.5P (x=0.4, 0.7 and 1.0) Quantum Wells on 15°-Off-(100) GaAs Substrates at High Growth Rate

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4460 ◽

1993 ◽

Vol 32 (Part 1, No. 10) ◽

pp. 4460-4466 ◽

Author(s):

Ming-Jiunn Jou ◽

Jyh-Feng Lin ◽

Chuan-Ming Chang ◽

Chun-Hung Lin ◽

Meng-Chyi Wu ◽

...

Keyword(s):

Growth Rate ◽

Quantum Wells ◽

Vapor Phase ◽

High Growth ◽

Metalorganic Vapor Phase Epitaxy ◽

High Growth Rate ◽

Vapor Phase Epitaxy ◽

Gaas Substrates

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Cross-sectional spatially resolved cathodoluminescence study of cubic GaN films grown by metalorganic vapor phase epitaxy on free-standing (001) 3C-SiC and GaAs substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.10.045 ◽

2007 ◽

Vol 298 ◽

pp. 193-197 ◽

Author(s):

T. Onuma ◽

T. Nozaka ◽

H. Yamaguchi ◽

T. Suzuki ◽

S.F. Chichibu

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Free Standing ◽

Cross Sectional ◽

Spatially Resolved ◽

Gaas Substrates ◽

Cubic Gan ◽

Cathodoluminescence Study

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