Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005.

Statistical and physical analysis of leakage and breakdown failure mechanisms of Cu/low-k interconnects

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. ◽

10.1109/ipfa.2005.1469176 ◽

2005 ◽

Author(s):

Tam Lyn Tan ◽

Hui Ping Lim ◽

Chee Lip Gan ◽

Nam Hwang

Keyword(s):

Failure Mechanisms ◽

Physical Analysis ◽

Low K

Download Full-text

Use of parallel polishing technique for root cause determination of EOS devices

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. ◽

10.1109/ipfa.2005.1469135 ◽

2005 ◽

Author(s):

W.B. Len ◽

M. Xue

Keyword(s):

Root Cause

Download Full-text

Moire stabilized thermal imaging

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. ◽

10.1109/ipfa.2005.1469153 ◽

2005 ◽

Cited By ~ 1

Author(s):

J.B. Colvin

Keyword(s):

Thermal Imaging

Download Full-text

Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. ◽

10.1109/ipfa.2005.1469184 ◽

2005 ◽

Author(s):

S.L. Toh ◽

K. Li ◽

C.H. Ang ◽

R. Rao ◽

E. Er ◽

...

Keyword(s):

High Resolution ◽

Electron Diffraction ◽

Strain State ◽

Convergent Beam Electron Diffraction ◽

X Ray Diffraction ◽

Beam Electron ◽

X Ray ◽

Convergent Beam

Download Full-text

Improvement of ageing simulation of electronic circuits based on behavioural modelling

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. ◽

10.1109/ipfa.2005.1469160 ◽

2005 ◽

Author(s):

F. Marc ◽

B. Mongellaz ◽

C. Bestory ◽

H. Levi ◽

Y. Danto

Keyword(s):

Electronic Circuits ◽

Behavioural Modelling

Download Full-text

Application of conductive AFM on the electrical characterization of single-bit marginal failure

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. ◽

10.1109/ipfa.2005.1469179 ◽

2005 ◽

Cited By ~ 2

Author(s):

M.F. Bailon ◽

P.F. Salinas ◽

J.S. Arboleda

Keyword(s):

Electrical Characterization ◽

Conductive Afm

Download Full-text

FEA simulation on the MCP bottom die cracking issue

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. ◽

10.1109/ipfa.2005.1469186 ◽

2005 ◽

Cited By ~ 1

Author(s):

Jiang Yuqi ◽

Shen Liang ◽

Wang ◽

Mingxiang ◽

Song Xianzhong

Keyword(s):

Fea Simulation

Download Full-text

Extraction of parameters and simulation of the hard breakdown I-V characteristics in ultrathin gate oxides

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. ◽

10.1109/ipfa.2005.1469150 ◽

2005 ◽

Cited By ~ 2

Author(s):

E. Miranda ◽

A. Ortiz-Conde ◽

F.J.G. Sanchez ◽

E. Farkas

Keyword(s):

Gate Oxides

Download Full-text

Etch characterization of packaged IC samples in an RIE with endpoint detection by ICP source for failure analysis applications

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. ◽

10.1109/ipfa.2005.1469144 ◽

2005 ◽

Author(s):

J.Y. Liao ◽

P.M. Batteate

Keyword(s):

Failure Analysis ◽

Endpoint Detection

Download Full-text

An innovative gate oxide characterization technique in the failure analysis of 0.13μm process technology based MOSFET device

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005. ◽

10.1109/ipfa.2005.1469164 ◽

2005 ◽

Author(s):

H.C. How ◽

K.B. Ooi ◽

J.C. Ng ◽

Mohd.K. Nizam ◽

H.B. Ng

Keyword(s):

Failure Analysis ◽

Gate Oxide ◽

Process Technology ◽

Characterization Technique

Download Full-text

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005.
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Statistical and physical analysis of leakage and breakdown failure mechanisms of Cu/low-k interconnects

Use of parallel polishing technique for root cause determination of EOS devices

Moire stabilized thermal imaging

Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

Improvement of ageing simulation of electronic circuits based on behavioural modelling

Application of conductive AFM on the electrical characterization of single-bit marginal failure

FEA simulation on the MCP bottom die cracking issue

Extraction of parameters and simulation of the hard breakdown I-V characteristics in ultrathin gate oxides

Etch characterization of packaged IC samples in an RIE with endpoint detection by ICP source for failure analysis applications

An innovative gate oxide characterization technique in the failure analysis of 0.13μm process technology based MOSFET device

Export Citation Format

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Statistical and physical analysis of leakage and breakdown failure mechanisms of Cu/low-k interconnects

Use of parallel polishing technique for root cause determination of EOS devices

Moire stabilized thermal imaging

Evaluation of the strain state in SiGe/Si heterostructures by high resolution X-ray diffraction and convergent beam electron diffraction

Improvement of ageing simulation of electronic circuits based on behavioural modelling

Application of conductive AFM on the electrical characterization of single-bit marginal failure

FEA simulation on the MCP bottom die cracking issue

Extraction of parameters and simulation of the hard breakdown I-V characteristics in ultrathin gate oxides

Etch characterization of packaged IC samples in an RIE with endpoint detection by ICP source for failure analysis applications

An innovative gate oxide characterization technique in the failure analysis of 0.13μm process technology based MOSFET device

Proceedings of the 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2005. IPFA 2005.
Latest Publications