Extraction of parameters and simulation of the hard breakdown I-V characteristics in ultrathin gate oxides

2005 ◽  
Author(s):  
E. Miranda ◽  
A. Ortiz-Conde ◽  
F.J.G. Sanchez ◽  
E. Farkas
Keyword(s):  
Gate Oxides

High-k gate oxides integration of graphene based infrared detector

2012 ◽  
Vol 31 (2) ◽  
pp. 118-121
Author(s):  
Peng ZHOU ◽  
Hong-Qiang WEI ◽  
Qing-Qing SUN ◽  
Li YE ◽  
Lin CHEN ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Gate Oxides ◽  
High K

Logistic model for leakage current in electrical stressed ultra-thin gate oxides

2003 ◽  
Vol 39 (9) ◽  
pp. 749 ◽  
Author(s):  
E. Miranda ◽  
A. Cester ◽  
A. Paccagnella
Keyword(s):  
Leakage Current ◽  
Logistic Model ◽  
Gate Oxides

Reliability of ultra-thin gate oxides grown in low-pressure N2O ambient or on nitrogen-implanted silicon

1999 ◽  
Vol 48 (1-4) ◽  
pp. 59-62
Author(s):  
A.J. Bauer ◽  
M. Beichele ◽  
M. Herden ◽  
H. Ryssel
Keyword(s):  
Low Pressure ◽  
Gate Oxides

Impact of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2468-2471 ◽  
Author(s):  
Tamotsu Ogata ◽  
Cozy Ban ◽  
Akemi Ueyama ◽  
Seiji Muranaka ◽  
Tomohiko Hayashi ◽  
...  
Keyword(s):  
Organic Contaminants ◽  
Electrical Characteristics ◽  
Gate Oxides
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