RF performance improvement on 22FDX® platform and beyond

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) ◽

10.1109/sispad.2019.8870435 ◽

2019 ◽

Author(s):

Tom Herrmann ◽

Alban Zaka ◽

Nandha Kumar Subramani ◽

Zhixing Zhao ◽

Steffen Lehmann ◽

...

Keyword(s):

Performance Improvement ◽

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MOSFET RF performance improvement through spacer profile optimization for 28nm Poly/SiON SoC technology

2017 China Semiconductor Technology International Conference (CSTIC) ◽

10.1109/cstic.2017.7919740 ◽

2017 ◽

Author(s):

Hai Liu ◽

River He ◽

Byunghak Lee

Keyword(s):

Performance Improvement ◽

Profile Optimization ◽

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Low-K Dielectric Pocket and Workfunction Engineering for DC and Analog/RF Performance Improvement in Dual Material Stack Gate Oxide Double Gate TFET

Silicon ◽

10.1007/s12633-020-00822-6 ◽

2020 ◽

Author(s):

Dharmender ◽

Kaushal Nigam

Keyword(s):

Performance Improvement ◽

Double Gate ◽

Rf Performance ◽

Dual Material ◽

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DC-RF Performance Improvement for Strained 0.13 μm MOSFETs mounted on a Flexible Plastic Substrate

2006 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.2006.249856 ◽

2006 ◽

Author(s):

H. Kao ◽

Albert Chin ◽

C. Liao ◽

Y. Tseng ◽

S. McAlister ◽

...

Keyword(s):

Performance Improvement ◽

Plastic Substrate ◽

Rf Performance ◽

Flexible Plastic Substrate

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DC and RF Performance Improvement of 70 nm Quantum Well Field Effect Transistor by Narrowing Source–Drain Spacing Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.010212 ◽

2010 ◽

Vol 49 (1) ◽

pp. 010212

Author(s):

Chien-I Kuo ◽

Heng-Tung Hsu ◽

Edward Yi Chang ◽

Yasuyuki Miyamoto ◽

Chien-Ying Wu ◽

...

Keyword(s):

Quantum Well ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistor ◽

Drain Spacing ◽

Effect Transistor ◽

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RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using $(\hbox{In}_{x}\hbox{Ga}_{1 - x}\hbox{As})_{m}/(\hbox{InAs})_{n}$ Superlattice-Channel Structure for Millimeter-Wave Applications

IEEE Electron Device Letters ◽

10.1109/led.2010.2048995 ◽

2010 ◽

Vol 31 (7) ◽

pp. 677-679 ◽

Author(s):

Chien-I Kuo ◽

Heng-Tung Hsu ◽

Yu-Lin Chen ◽

Chien-Ying Wu ◽

Edward Yi Chang ◽

...

Keyword(s):

Performance Improvement ◽

Millimeter Wave ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Channel Structure ◽

High Electron ◽

High Electron Mobility ◽

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Importance of $V_{\rm th}$ and Substrate Resistance Control for RF Performance Improvement in MOSFETs

IEEE Electron Device Letters ◽

10.1109/led.2009.2029131 ◽

2009 ◽

Vol 30 (10) ◽

pp. 1099-1101 ◽

Author(s):

Han-Su Kim ◽

Kangwook Park ◽

Hansu Oh ◽

Eun Seung Jung

Keyword(s):

Performance Improvement ◽

Substrate Resistance ◽

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High RF performance improvement using surface passivation technique of AlGaN/GaN HEMTs at K‐band application

Electronics Letters ◽

10.1049/el.2013.1211 ◽

2013 ◽

Vol 49 (16) ◽

pp. 1013-1015 ◽

Author(s):

B.H. Lee ◽

R.H. Kim ◽

B.O. Lim ◽

G.W. Choi ◽

H.J. Kim ◽

...

Keyword(s):

Performance Improvement ◽

Surface Passivation ◽

Gan Hemts ◽

Rf Performance ◽

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Drain Work Function Engineered Doping-Less Charge Plasma TFET for Ambipolar Suppression and RF Performance Improvement: A Proposal, Design, and Investigation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2600621 ◽

2016 ◽

Vol 63 (10) ◽

pp. 3950-3957 ◽

Author(s):

Bhagwan Ram Raad ◽

Dheeraj Sharma ◽

Pravin Kondekar ◽

Kaushal Nigam ◽

Dharmendra Singh Yadav

Keyword(s):

Work Function ◽

Performance Improvement ◽

Charge Plasma ◽

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Layout-Induced Strain Study for RF Performance Improvement of 22-nm UTBB FDSOI PFET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2021.3077828 ◽

2021 ◽

pp. 1-8

Author(s):

Karen Sloyan ◽

Florent Ravaux ◽

Zhixing Zhao ◽

Dominik Kleimaier ◽

Dirk Utess ◽

...

Keyword(s):

Performance Improvement ◽

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QUERI II and VA Performance Improvement

PsycEXTRA Dataset ◽

10.1037/e578182006-002 ◽

2006 ◽

Author(s):

Diana Ordin

Keyword(s):

Performance Improvement

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