Electro-Thermal Analysis and Edge Termination Techniques of High Current β-Ga2 O3 Schottky Rectifiers

2019 ◽  
Author(s):  
Ribhu Sharma ◽  
Erin Patlick ◽  
Jiancheng Yang ◽  
Fan Ren ◽  
Mark Law ◽  
...  
Keyword(s):  
Thermal Analysis ◽  
High Current ◽  
Edge Termination ◽  
Schottky Rectifiers

Temperature Impact on High-Current 1.2kV SiC Schottky Rectifiers

2005 ◽  
pp. 929-932
Author(s):  
Xavier Jordà ◽  
Dominique Tournier ◽  
Jose Rebollo ◽  
José Millán ◽  
Phillippe Godignon
Keyword(s):  
High Current ◽  
Schottky Rectifiers ◽  
Temperature Impact

Thermal-Analysis Modeling of High-Current Solid Targets for Radioisotope Production

2008 ◽  
Vol 52 (9(3)) ◽  
pp. 920-924 ◽  
Author(s):  
Seuk-Kyu Kim ◽  
Jae Hong Kim ◽  
Sang-Rok Kim
Keyword(s):  
Thermal Analysis ◽  
High Current ◽  
Radioisotope Production

Temperature Dependence and Current Transport Mechanisms in AlxGa1−xN Schottky Rectifiers

2000 ◽  
Vol 622 ◽  
Author(s):  
A.P. Zhang ◽  
X.A. Cao ◽  
G. Dang ◽  
F. Ren ◽  
J. Han ◽  
...  
Keyword(s):  
Negative Temperature Coefficient ◽  
Reverse Current ◽  
Negative Temperature ◽  
Current Transport ◽  
Transport Mechanisms ◽  
Edge Termination ◽  
Turn On ◽  
Schottky Rectifiers ◽  
Moderate Bias ◽  
A Current

ABSTRACTGaN and Al0.25Ga0.75N lateral Schottky rectifiers were fabricated either with (GaN) or without (AlGaN) edge termination. The reverse breakdown voltage VB (3.1 kV for GaN with both p+ guard rings and metal overlap edge terminations; 4.3 kV for Al0.25Ga0.75N without edge termination) displayed a negative temperature coefficient of −6.0 ± 0.4 V·K−1 for both types of rectifiers. The reverse current originated from contact periphery leakage at moderate bias, while the forward turn-on voltage at a current density of 100A·Cm−2 was ∼5 V for GaN and ∼7.5 V for AlGaN. The on-state resistances, RON, were 0.13 Δcm2 for GaN and 2.3 Δcm2 for AlGaN, producing figures-or-merit (VRB)2/RON of 73.9 and 8.2 MW.Cm−2, respectively. The activation energy of the reverse leakage was 0.13 eV at moderate bias.

Processing and Device Performance of GaN Power Rectifiers

1999 ◽  
Vol 595 ◽  
Author(s):  
A.P. Zhang ◽  
G.T. Dang ◽  
X.A. Cao ◽  
H. Cho ◽  
F. Ren ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Breakdown Voltage ◽  
Schottky Contact ◽  
Planar Geometry ◽  
Epitaxial Layers ◽  
Device Performance ◽  
Edge Termination ◽  
Schottky Rectifiers ◽  
Planar Diodes

AbstractMesa and planar geometry GaN Schottky rectifiers were fabricated on 3-12µm thick epitaxial layers. In planar diodes utilizing resistive GaN, a reverse breakdown voltage of 3.1 kV was achieved in structures containing p-guard rings and employing extension of the Schottky contact edge over an oxide layer. In devices without edge termination, the reverse breakdown voltage was 2.3 kV. Mesa diodes fabricated on conducting GaN had breakdown voltages in the range 200-400 V, with on-state resistances as low as 6m Ωcm−2.

Estimation of Heat Generation From Power Si MOSFET Using Electro-Thermal Analysis

2013 ◽  
Author(s):  
Risako Kibushi ◽  
Tomoyuki Hatakeyama ◽  
Masaru Ishizuka
Keyword(s):  
Thermal Analysis ◽  
Thermal Properties ◽  
Thermal Management ◽  
Heat Generation ◽  
Thermal Energy ◽  
Hot Spot ◽  
Energy State ◽  
High Current ◽  
The Impact ◽  
Spot Temperature

This paper describes thermal properties of power Si MOSFET. The problem of hot spot in sub-micron scale Si MOSFET has been widely known. Recently, power Si MOSFET is a key device in a lot of area, for example car electronics. In power Si MOSFET, high voltage is applied and high current is generated. Therefore, heat generation becomes higher and thermal management is important. In this paper, thermal properties of power Si MOSFET is evaluated with Electro-Thermal Analysis and impurity dependency of temperature of power Si MOSFET is discussed. Under high electric field, electron thermal energy becomes much higher than thermal energy of crystal lattice. Therefore, in this paper, non-equilibrium energy state between electron and lattice is considered. Calculated results showed that hot spot appears in power Si MOSFET. Further, it is investigated that the impact of donor density on hot spot temperature is strong.

High reverse breakdown voltage Schottky rectifiers without edge termination on Ga2O3

2017 ◽  
Vol 110 (19) ◽  
pp. 192101 ◽  
Author(s):  
Jiancheng Yang ◽  
Shihyun Ahn ◽  
F. Ren ◽  
S. J. Pearton ◽  
Soohwan Jang ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Edge Termination ◽  
Schottky Rectifiers

High current bulk GaN Schottky rectifiers

2002 ◽  
Vol 46 (12) ◽  
pp. 2169-2172 ◽  
Author(s):  
K Ip ◽  
K.H Baik ◽  
B Luo ◽  
F Ren ◽  
S.J Pearton ◽  
...  
Keyword(s):  
High Current ◽  
Schottky Rectifiers ◽  
Bulk Gan
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