Graphene–TiO2 for scattering layer in photoanodes of dye-sensitized solar cell

The scattering layer in the TiO2 photoanode (PAs) of dye-sensitized solar cells (DSSCs) is doped with single-layer graphene (G), and DSSC is prepared by doctor blade coating method. A small amount of graphene (0.0016 wt.%) in a graphene aqueous solution (G-AS) and a G-TiO2 paste was prepared to make 2–20 wt.% of G-AS in the deionized water (DIW). The UV-Vis measurement results show that the TiO2 scattering layers doped with graphene effectively improve the visible light absorption intensity of DSSC PAs and increase the current density (Jsc) from 13.84 mA/cm2 to 16.20 mA/cm2. The Electrochemical Impedance Spectroscopy (EIS) measurement showed that the internal structural impedance Rk [Formula: see text] decreased from 12.086 [Formula: see text] (without graphene doping) to 9.875 [Formula: see text] at 5 wt.% of the graphene doping. The photoelectric conversion efficiency (PCE) increased from 6.56% of the original un-doped graphene to the maximum PCE value of 7.57% at 5 wt.%. The results show that the best PCE is obtained when the concentration of G-AS is 5 wt.%.

Interface dependence of electrical contact and graphene doping in graphene/XPtY (X, Y= S, Se, Te) heterostructures

The electrical contact and graphene (Gr) doping for the Gr/XPtY (X, Y = S, Se, Te) van der Waals (vdW) heterostructures are studied by using the first-principle methods. The intrinsic...

Effect of Graphene Doping Level near the Metal Contact Region on Electrical and Photoresponse Characteristics of Graphene Photodetector

Graphene-metal contact is crucial to fabricate high-performance graphene photodetectors since the external quantum efficiency (EQE) of the photodetector depends on the contact properties, and the influence of the contact properties is particularly dominant in short channel devices for high-speed applications. Moreover, junction properties between the channel graphene and graphene near the contact are also important to analyze the photoresponse because the built-in electric field in the junction determines the EQE of the photodetector. In this study, we investigated a relation between the photoresponse and the built-in electric field induced from the doping level difference in the junction between the channel graphene and graphene near the contact. The photoresponse could be enhanced with a high junction barrier height that is tuned by the doping level difference. In addition, we observed that the improved electrical characteristics of channel graphene do not guarantee the enhancement of the photoresponse characteristics of graphene photodetectors.