International Semiconductor Device Research Symposium, 2003
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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)

2004 ◽  
Author(s):  
M. Hasanuzzarnan ◽  
S.K. Islam ◽  
L.M. Tolbert ◽  
M.T. Alam
Keyword(s):  
Silicon Carbide ◽  
Temperature Dependency

Development of ohmic contact materials for wide gap p-type 4H-SiC

2004 ◽  
Author(s):  
S. Tsukimoto ◽  
O. Nakatsuka ◽  
M. Moriyama ◽  
M. Murakami
Keyword(s):  
Ohmic Contact ◽  
Contact Materials ◽  
Wide Gap ◽  
P Type

Design and fabrication of Schottky diode, on-chip RF power defector

2004 ◽  
Author(s):  
Woochul Jeon ◽  
J. Rodgers ◽  
J. MeIngailis
Keyword(s):  
Schottky Diode ◽  
Rf Power ◽  
On Chip

Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVD

2004 ◽  
Author(s):  
S. Van Elshocht ◽  
B. Brijs ◽  
M. Caymax ◽  
T. Conard ◽  
S. De Gendt ◽  
...  
Keyword(s):  
Physical Characterization

A new wideband modeling technique for deep sub-micron MOSFET's

2004 ◽  
Author(s):  
Ming Hsiang Chiou ◽  
K.Y.I. Hsu
Keyword(s):  
Modeling Technique

scholarly journals Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation

2004 ◽  
Author(s):  
H.-M. Wu ◽  
J.-V. Lin ◽  
L.-H. Peng ◽  
C.-M. Lee ◽  
J.-I. Chyi ◽  
...  
Keyword(s):  
Interfacial Properties ◽  
Wet Oxidation ◽  
Annealing Effects
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