Nitride Semiconductors
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Published By Wiley-VCH Verlag Gmbh & Co. Kgaa

9783527607648, 9783527403875
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Ohmic Contacts to GaN

2006 ◽  
pp. 489-527
Author(s):  
Philip J. Hartlieb ◽  
Robert F. Davis ◽  
Robert J. Nemanich
Keyword(s):  
Ohmic Contacts

High-Pressure Crystallization of GaN

2006 ◽  
pp. 1-43
Author(s):  
Izabella Grzegory ◽  
Stanisław Krukowski ◽  
Michaeł Leszczyński ◽  
Piotr Perlin ◽  
Tadeusz Suski ◽  
...  
Keyword(s):  
High Pressure ◽  
Pressure Crystallization

GaN-Based Modulation-Doped FETs and Heterojunction Bipolar Transistors

2006 ◽  
pp. 547-626 ◽  
Author(s):  
Hadis Morkoç ◽  
Lianghong Liu
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors

scholarly journals Subject Index

2006 ◽  
pp. 661-664

GaN-Based UV Photodetectors

2006 ◽  
pp. 627-660 ◽  
Author(s):  
Franck Omnes ◽  
Eva Monroy
Keyword(s):  
Uv Photodetectors

scholarly journals Front Matter

2006 ◽  
pp. I-XXII

Extended Defects in Wurtzite GaN Layers: Atomic Structure, Formation, and Interaction Mechanisms

2006 ◽  
pp. 379-438
Author(s):  
Pierre Ruterana ◽  
Ana M. Sánchez ◽  
Gérard Nouet
Keyword(s):  
Structure Formation ◽  
Atomic Structure ◽  
Extended Defects ◽  
Interaction Mechanisms

Growth of Gallium Nitride by Hydride Vapor Phase Epitaxy

2006 ◽  
pp. 193-239 ◽  
Author(s):  
Agnès Trassoudaine ◽  
Robert Cadoret ◽  
Eric Aujol
Keyword(s):  
Gallium Nitride ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Surface Structure and Adatom Kinetics of Group-III Nitrides

2006 ◽  
pp. 295-318 ◽  
Author(s):  
Jörg Neugebauer
Keyword(s):  
Surface Structure ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Kinetics Of

Electroluminescent Diodes and Laser Diodes

2006 ◽  
pp. 529-546
Author(s):  
Hiroshi Amano
Keyword(s):  
Laser Diodes
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