Crucial Issues in Semiconductor Materials and Processing Technologies
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Published By Springer Netherlands

9789401052030, 9789401127141

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The Amorphous Side of Solid Phase Epitaxy

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_48 ◽

1992 ◽

pp. 477-482 ◽

Cited By ~ 1

Author(s):

J. S. Custer

Keyword(s):

Solid Phase ◽

Solid Phase Epitaxy

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Diffusion of Gold in Sputtered Amorphous Silicon

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_40 ◽

1992 ◽

pp. 409-413

Author(s):

A. V. Wagner ◽

D. T. Wu ◽

F. Spaepen

Keyword(s):

Amorphous Silicon

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Diffusion in Cobalt Silicide During Silicide Formation

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_36 ◽

1992 ◽

pp. 369-374 ◽

Cited By ~ 2

Author(s):

C. M. Comrie ◽

J. E. McLeod

Keyword(s):

Cobalt Silicide ◽

Silicide Formation

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Hyperfine Fields in Epitaxially Grown Co on Gaas

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_32 ◽

1992 ◽

pp. 327-330

Author(s):

J. Dekoster ◽

P. Belien ◽

Y. Bruynseraede ◽

G. Langouche

Keyword(s):

Hyperfine Fields

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Deep Implants by Means of Channeling: Ion Distribution and Radiation Damage in Angle Controlled N+ Implantation in Silicon

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_20 ◽

1992 ◽

pp. 213-217

Author(s):

A. Gasparotto ◽

A. Carnera ◽

S. Acco ◽

A. Ferla

Keyword(s):

Radiation Damage ◽

Ion Distribution

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Trends in Ion Implantation for Semiconductor and Optical Materials Research

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_18 ◽

1992 ◽

pp. 195-205

Author(s):

J. M. Poate ◽

D. C. Jacobson ◽

D. J. Eaglesham

Keyword(s):

Ion Implantation ◽

Optical Materials ◽

Materials Research

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Lithography for Manufacturing at 0.25 Micrometer and Below

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_16 ◽

1992 ◽

pp. 153-166

Author(s):

Henry I. Smith ◽

M. L. Schattenburg

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Mössbauer Study of the Dx-Center in Te-Implanted AlxGa1-xAs

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_14 ◽

1992 ◽

pp. 141-145

Author(s):

H. Bemelmans ◽

G. Borghs ◽

G. Langouche

Keyword(s):

Mössbauer Study ◽

Dx Center

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Electrical Properties of “Clean” and Fe — Decorated Stacking Faults in P-Type Silicon

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_12 ◽

1992 ◽

pp. 129-133 ◽

Cited By ~ 1

Author(s):

B. Fiegl ◽

G. Zoth

Keyword(s):

Electrical Properties ◽

Stacking Faults ◽

Type Silicon ◽

P Type

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The Mechanism of Solid Phase Epitaxy

Crucial Issues in Semiconductor Materials and Processing Technologies ◽

10.1007/978-94-011-2714-1_47 ◽

1992 ◽

pp. 465-476 ◽

Cited By ~ 2

Author(s):

Michael J. Aziz

Keyword(s):

Solid Phase ◽

Solid Phase Epitaxy

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Crucial Issues in Semiconductor Materials and Processing TechnologiesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By Springer Netherlands

The Amorphous Side of Solid Phase Epitaxy

Diffusion of Gold in Sputtered Amorphous Silicon

Diffusion in Cobalt Silicide During Silicide Formation

Hyperfine Fields in Epitaxially Grown Co on Gaas

Deep Implants by Means of Channeling: Ion Distribution and Radiation Damage in Angle Controlled N+ Implantation in Silicon

Trends in Ion Implantation for Semiconductor and Optical Materials Research

Lithography for Manufacturing at 0.25 Micrometer and Below

Mössbauer Study of the Dx-Center in Te-Implanted AlxGa1-xAs

Electrical Properties of “Clean” and Fe — Decorated Stacking Faults in P-Type Silicon

The Mechanism of Solid Phase Epitaxy

Crucial Issues in Semiconductor Materials and Processing Technologies
Latest Publications