Deep Implants by Means of Channeling: Ion Distribution and Radiation Damage in Angle Controlled N+ Implantation in Silicon

1992 ◽  
pp. 213-217
Author(s):  
A. Gasparotto ◽  
A. Carnera ◽  
S. Acco ◽  
A. Ferla
Keyword(s):  
Radiation Damage ◽  
Ion Distribution

scholarly journals Using of Stopping and Range of Ions in Matter Code to Study of Radiation Damage in Materials

2020 ◽  
Vol 12 (4) ◽  
pp. 451-456
Author(s):  
Hiwa Mohammad Qadr ◽  
◽  
Ari Maghdid Hamad ◽  
Keyword(s):  
Radiation Damage ◽  
Proton Energy ◽  
Damage Parameter ◽  
Irradiation Damage ◽  
Ion Distribution ◽  
Atomic Displacements ◽  
Energy Irradiation ◽  
Definition Of ◽  
Displacement Per Atom ◽  
The Impact

The aim of this work to investigate the impact of the radiation damage in the materials by the proton energy irradiation. The damage parameter used in the evaluation is displacement per atom (DPA) in material as a function of proton energy. Stopping and Range of Ions in Matter (SRIM) code was used to calculate the total vacancy and the number of atomic displacements based on the Norgett-Robinson-Torrens model by difference energies for proton irradiation damage. The option of this code was calculated by using Ion Distribution and Quick Calculation of Damage (Kinchin-Pease) for Fe and Cu target and also Full damage cascade (F-C) was chosen for only Fe. The result is that, the prediction of the F-C model are higher than the K-P calculation. Comparisons has been made with an international standard definition of DPA.

Electron Beam Damage of Biomolecules Assessed by Energy Loss Spectroscopy

1978 ◽  
Vol 36 (3) ◽  
pp. 61-69
Author(s):  
M. Isaacson ◽  
M.L. Collins ◽  
M. Listvan
Keyword(s):  
Electron Microscopy ◽  
Radiation Damage ◽  
Structural Integrity ◽  
Analytical Electron Microscopy ◽  
High Dose ◽  
Dose Rates ◽  
Special Cases ◽  
Analytical Electron ◽  
Atom Migration ◽  
Beam Damage

Over the past five years it has become evident that radiation damage provides the fundamental limit to the study of blomolecular structure by electron microscopy. In some special cases structural determinations at very low doses can be achieved through superposition techniques to study periodic (Unwin & Henderson, 1975) and nonperiodic (Saxton & Frank, 1977) specimens. In addition, protection methods such as glucose embedding (Unwin & Henderson, 1975) and maintenance of specimen hydration at low temperatures (Taylor & Glaeser, 1976) have also shown promise. Despite these successes, the basic nature of radiation damage in the electron microscope is far from clear. In general we cannot predict exactly how different structures will behave during electron Irradiation at high dose rates. Moreover, with the rapid rise of analytical electron microscopy over the last few years, nvicroscopists are becoming concerned with questions of compositional as well as structural integrity. It is important to measure changes in elemental composition arising from atom migration in or loss from the specimen as a result of electron bombardment.

Radiation Damage in Ceramics

1982 ◽  
Vol 40 ◽  
pp. 600-603
Author(s):  
T. E. Mitchell ◽  
M. R. Pascucci ◽  
R. A. Youngman
Keyword(s):  
Radiation Damage ◽  
Outer Space ◽  
Point Of View ◽  
Nuclear Waste Storage ◽  
Waste Storage ◽  
Storage Media ◽  
Transmission Electron ◽  
Fundamental Point ◽  
Small Defect ◽  
Present Understanding

1. Introduction. Studies of radiation damage in ceramics are of interest not only from a fundamental point of view but also because it is important to understand the behavior of ceramics in various practical radiation enyironments- fission and fusion reactors, nuclear waste storage media, ion-implantation devices, outer space, etc. A great deal of work has been done on the spectroscopy of point defects and small defect clusters in ceramics, but relatively little has been performed on defect agglomeration using transmission electron microscopy (TEM) in the same kind of detail that has been so successful in metals. This article will assess our present understanding of radiation damage in ceramics with illustrations using results obtained from the authors' work.

Review of the Radiation Damage Problem of Organic Specimens in Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 476-477
Author(s):  
L. Reimer
Keyword(s):  
Electron Microscopy ◽  
Radiation Damage ◽  
Irradiation Time ◽  
Dose Effect ◽  
Primary Process ◽  
Thin Specimen ◽  
Secondary Damage ◽  
Small Doses ◽  
Micro Organisms ◽  
Damage Processes

Most information about a specimen is obtained by elastic scattering of electrons, but one cannot avoid inelastic scattering and therefore radiation damage by ionisation as a primary process of damage. This damage is a dose effect, being proportional to the product of lectron current density j and the irradiation time t in Coul.cm−2 as long as there is a negligible heating of the specimen.Therefore one has to determine the dose needed to produce secondary damage processes, which can be measured quantitatively by a chemical or physical effect in the thin specimen. The survival of micro-organisms or the decrease of photoconductivity and cathodoluminescence are such effects needing very small doses (see table).

Practical Picture Processing

1974 ◽  
Vol 32 ◽  
pp. 338-339
Author(s):  
T. A. Welton
Keyword(s):  
Radiation Damage ◽  
Coherence Length ◽  
Spatial Information ◽  
State Of The Art ◽  
Coherent Radiation ◽  
The State ◽  
Energy Spread ◽  
Electron Micrograph ◽  
Picture Processing ◽  
Molecular Skeleton

Various authors have emphasized the spatial information resident in an electron micrograph taken with adequately coherent radiation. In view of the completion of at least one such instrument, this opportunity is taken to summarize the state of the art of processing such micrographs. We use the usual symbols for the aberration coefficients, and supplement these with £ and 6 for the transverse coherence length and the fractional energy spread respectively. He also assume a weak, biologically interesting sample, with principal interest lying in the molecular skeleton remaining after obvious hydrogen loss and other radiation damage has occurred.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

Radiation Damage Studies with the HVEM

1972 ◽  
Vol 30 ◽  
pp. 680-681
Author(s):  
J. J. Laidler ◽  
B. Mastel
Keyword(s):  
Radiation Damage ◽  
Stainless Steels ◽  
Volume Expansion ◽  
Austenitic Stainless Steels ◽  
Test Facility ◽  
Fast Breeder Reactors ◽  
Breeder Reactors ◽  
Under Construction ◽  
Development Laboratory ◽  
Insight Into

One of the major materials problems encountered in the development of fast breeder reactors for commercial power generation is the phenomenon of swelling in core structural components and fuel cladding. This volume expansion, which is due to the retention of lattice vacancies by agglomeration into large polyhedral clusters (voids), may amount to ten percent or greater at goal fluences in some austenitic stainless steels. From a design standpoint, this is an undesirable situation, and it is necessary to obtain experimental confirmation that such excessive volume expansion will not occur in materials selected for core applications in the Fast Flux Test Facility, the prototypic LMFBR now under construction at the Hanford Engineering Development Laboratory (HEDL). The HEDL JEM-1000 1 MeV electron microscope is being used to provide an insight into trends of radiation damage accumulation in stainless steels, since it is possible to produce atom displacements at an accelerated rate with 1 MeV electrons, while the specimen is under continuous observation.

Structure images of Si, Ge and Mos2 crystals and some application to radiation damage studies

1978 ◽  
Vol 36 (1) ◽  
pp. 292-293 ◽  
Author(s):  
K. Izui ◽  
T. Nishida ◽  
S. Furuno ◽  
H. Otsu ◽  
S. Kuwabara
Keyword(s):  
Radiation Damage ◽  
Exposure Time ◽  
Gaussian Distribution ◽  
Intensity Distribution ◽  
Chromatic Aberration ◽  
Magnetic Lens

Recently we have observed the structure images of silicon in the (110), (111) and (100) projection respectively, and then examined the optimum defocus and thickness ranges for the formation of such images on the basis of calculations of image contrasts using the n-slice theory. The present paper reports the effects of a chromatic aberration and a slight misorientation on the images, and also presents some applications of structure images of Si, Ge and MoS2 to the radiation damage studies.(1) Effect of a chromatic aberration and slight misorientation: There is an inevitable fluctuation in the amount of defocus due to a chromatic aberration originating from the fluctuations both in the energies of electrons and in the magnetic lens current. The actual image is a results of superposition of those fluctuated images during the exposure time. Assuming the Gaussian distribution for defocus, Δf around the optimum defocus value Δf0, the intensity distribution, I(x,y) in the image formed by this fluctuation is given by

Possible applications of fraunhofer holography in high resolution electron microscopy

1978 ◽  
Vol 36 (1) ◽  
pp. 222-223 ◽  
Author(s):  
N. Bonnet ◽  
M. Troyon ◽  
P. Gallion
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Transfer Function ◽  
Radiation Damage ◽  
High Resolution Electron Microscopy ◽  
Far Field ◽  
Field Region ◽  
Crystalline Materials ◽  
Resolution Electron ◽  
The Ideal

Two main problems in high resolution electron microscopy are first, the existence of gaps in the transfer function, and then the difficulty to find complex amplitude of the diffracted wawe from registered intensity. The solution of this second problem is in most cases only intended by the realization of several micrographs in different conditions (defocusing distance, illuminating angle, complementary objective apertures…) which can lead to severe problems of contamination or radiation damage for certain specimens.Fraunhofer holography can in principle solve both problems stated above (1,2). The microscope objective is strongly defocused (far-field region) so that the two diffracted beams do not interfere. The ideal transfer function after reconstruction is then unity and the twin image do not overlap on the reconstructed one.We show some applications of the method and results of preliminary tests.Possible application to the study of cavitiesSmall voids (or gas-filled bubbles) created by irradiation in crystalline materials can be observed near the Scherzer focus, but it is then difficult to extract other informations than the approximated size.

Design of Sensitive Photographic Materials for the High-Voltage Electron Microscope

1975 ◽  
Vol 33 ◽  
pp. 156-157
Author(s):  
Murray Vernon King ◽  
Donald F. Parsons
Keyword(s):  
Electron Microscope ◽  
Radiation Damage ◽  
High Voltage ◽  
Radiation Sensitivity ◽  
Fast Electrons ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Biological Studies ◽  
Low Sensitivity

Effective application of the high-voltage electron microscope to a wide variety of biological studies has been restricted by the radiation sensitivity of biological systems. The problem of radiation damage has been recognized as a serious factor influencing the amount of information attainable from biological specimens in electron microscopy at conventional voltages around 100 kV. The problem proves to be even more severe at higher voltages around 1 MV. In this range, the problem is the relatively low sensitivity of the existing recording media, which entails inordinately long exposures that give rise to severe radiation damage. This low sensitivity arises from the small linear energy transfer for fast electrons. Few developable grains are created in the emulsion per electron, while most of the energy of the electrons is wasted in the film base.

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