Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
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186

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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Impact of energy contamination of ultra-low energy implants on sub-0.1-&mu;m CMOS device performance

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1257933 ◽

2002 ◽

Author(s):

D. Lenoble ◽

P. Prod'homme ◽

D. Beutier ◽

C. Julien

Keyword(s):

Low Energy ◽

Device Performance

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Gas cluster ion beam processing equipment

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1258094 ◽

2002 ◽

Author(s):

J. Bachand ◽

A. Freytsis ◽

E. Harrington ◽

M. Gwinn ◽

N. Hofmeester ◽

...

Keyword(s):

Ion Beam ◽

Processing Equipment ◽

Cluster Ion ◽

Gas Cluster Ion Beam

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Effect of microwave radiation on boron activation

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1258062 ◽

2002 ◽

Cited By ~ 3

Author(s):

K. Thompson ◽

J.H. Booske ◽

D.F. Downey ◽

E.A. Arevalo

Keyword(s):

Microwave Radiation

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Different ion implanted edge terminations for Schottky diodes on SiC

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1257958 ◽

2002 ◽

Author(s):

R. Weiss ◽

L. Frey ◽

H. Ryssel

Keyword(s):

Schottky Diodes ◽

Ion Implanted

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Electrical activation of implanted single crystal germanium substrates

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1258063 ◽

2002 ◽

Author(s):

C. Jasper ◽

L. Rubin ◽

C. Lindfors ◽

K.S. Jones ◽

Jungwoo Oh Jungwoo Oh

Keyword(s):

Single Crystal ◽

Electrical Activation ◽

Germanium Substrates

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Activation behavior of BF2+ implants in RTP annealed silicon

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1258098 ◽

2002 ◽

Author(s):

V.F. Drobny ◽

K. Chang ◽

D. Robinson

Keyword(s):

Activation Behavior

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Raman and FTIR studies on nanostructure formation on silicon carbide

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1258105 ◽

2002 ◽

Author(s):

I. Muntele ◽

C.I. Muntele ◽

D. Ila ◽

D.B. Poker ◽

D.K. Hensley

Keyword(s):

Silicon Carbide ◽

Nanostructure Formation ◽

Ftir Studies

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SIMS depth profiling and SRIM simulation to lower energy antimony implantation into silicon

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1258083 ◽

2002 ◽

Author(s):

Yupu Li Yupu Li ◽

J. Shyue ◽

J. Hunter ◽

B. McComb ◽

M. Chun ◽

...

Keyword(s):

Lower Energy ◽

Depth Profiling ◽

Sims Depth Profiling

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Study of pulsed plasma doping by Langmuir probe and ion mass-energy analyzer

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1258025 ◽

2002 ◽

Author(s):

Ziwei Fang Ziwei Fang ◽

Bon-Woong Koo Bon-Woong Koo ◽

S. Felch ◽

Yu Lei Yu Lei ◽

L.J. Overzet ◽

...

Keyword(s):

Langmuir Probe ◽

Pulsed Plasma ◽

Energy Analyzer ◽

Mass Energy ◽

Plasma Doping

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Dose reproducibility in Axcelis GSD implanters using Stabil-Ion gauge

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on ◽

10.1109/iit.2002.1258012 ◽

2002 ◽

Author(s):

R.C. Johnson ◽

R. Tysinger

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Ion Implantation Technology. 2002. Proceedings of the 14th International Conference onLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Impact of energy contamination of ultra-low energy implants on sub-0.1-&amp;mu;m CMOS device performance

Gas cluster ion beam processing equipment

Effect of microwave radiation on boron activation

Different ion implanted edge terminations for Schottky diodes on SiC

Electrical activation of implanted single crystal germanium substrates

Activation behavior of BF2+ implants in RTP annealed silicon

Raman and FTIR studies on nanostructure formation on silicon carbide

SIMS depth profiling and SRIM simulation to lower energy antimony implantation into silicon

Study of pulsed plasma doping by Langmuir probe and ion mass-energy analyzer

Dose reproducibility in Axcelis GSD implanters using Stabil-Ion gauge

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on
Latest Publications

Impact of energy contamination of ultra-low energy implants on sub-0.1-μm CMOS device performance